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Title: Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

Abstract

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

Inventors:
; ; ;
Publication Date:
Research Org.:
The Regents of the University of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414404
Patent Number(s):
9,847,487
Application Number:
14/646,136
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI) EFRC
DOE Contract Number:
SC0000957; EE0005310
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 22
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Forrest, Stephen R., Zimmerman, Jeramy D., Lassiter, Brian E ., and Xiao, Xin. Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics. United States: N. p., 2017. Web.
Forrest, Stephen R., Zimmerman, Jeramy D., Lassiter, Brian E ., & Xiao, Xin. Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics. United States.
Forrest, Stephen R., Zimmerman, Jeramy D., Lassiter, Brian E ., and Xiao, Xin. Tue . "Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics". United States. doi:. https://www.osti.gov/servlets/purl/1414404.
@article{osti_1414404,
title = {Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics},
author = {Forrest, Stephen R. and Zimmerman, Jeramy D. and Lassiter, Brian E . and Xiao, Xin},
abstractNote = {Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 19 00:00:00 EST 2017},
month = {Tue Dec 19 00:00:00 EST 2017}
}

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