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Title: Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Abstract

Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.

Authors:
 [1];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1414376
Report Number(s):
NREL/JA-5K00-70146
Journal ID: ISSN 0022-3727; TRN: US1800699
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 51; Journal Issue: 2; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; epitaxy; photoassisted; semiconductor

Citation Formats

Alberi, Kirstin, and Scarpulla, Michael A. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes. United States: N. p., 2017. Web. doi:10.1088/1361-6463/aa944c.
Alberi, Kirstin, & Scarpulla, Michael A. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes. United States. doi:10.1088/1361-6463/aa944c.
Alberi, Kirstin, and Scarpulla, Michael A. Wed . "Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes". United States. doi:10.1088/1361-6463/aa944c.
@article{osti_1414376,
title = {Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes},
author = {Alberi, Kirstin and Scarpulla, Michael A.},
abstractNote = {Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.},
doi = {10.1088/1361-6463/aa944c},
journal = {Journal of Physics. D, Applied Physics},
number = 2,
volume = 51,
place = {United States},
year = {Wed Nov 22 00:00:00 EST 2017},
month = {Wed Nov 22 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 22, 2018
Publisher's Version of Record

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