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Title: Low-temperature conducting state in two candidate topological Kondo insulators: SmB 6 and Ce 3 Bi 4 Pt 3

Abstract

We have investigated the low temperature conducting state of two Kondo insulators, SmB 6 and Ce 3Bi 4Pt 3, which have been theoretically predicted to host topological surface states. Through comparison of the speci c heat of as-grown and powdered single crystals of SmB 6, we show that the residual term that is linear in temperature is not dominated by any surface state contribution, but rather is a bulk property. In Ce 3Bi 4Pt 3, we find that the Hall coefficient is independent of sample thickness, which indicates that conduction at low temperatures is dominated by the bulk of the sample, and not by a surface state. The low temperature resistivity of Ce 3Bi 4Pt 3 is found to monotonically decrease with low concentrations of disorder introduced through ion-irradiation. This is in contrast to SmB 6, which is again indicative of the contrasting origins of the low temperature conduction. In SmB 6, we also show that the effect of low concentrations of irradiation damage of the surface with Fe + ions is qualitatively consistent with damage with non-magnetic ions.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of California, Irvine, CA (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1414091
Alternate Identifier(s):
OSTI ID: 1261700
Report Number(s):
LA-UR-16-22744
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US1800626
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wakeham, N., Rosa, P. F. S., Wang, Y. Q., Kang, M., Fisk, Z., Ronning, F., and Thompson, J. D. Low-temperature conducting state in two candidate topological Kondo insulators: SmB6 and Ce3Bi4Pt3. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.035127.
Wakeham, N., Rosa, P. F. S., Wang, Y. Q., Kang, M., Fisk, Z., Ronning, F., & Thompson, J. D. Low-temperature conducting state in two candidate topological Kondo insulators: SmB6 and Ce3Bi4Pt3. United States. doi:10.1103/PhysRevB.94.035127.
Wakeham, N., Rosa, P. F. S., Wang, Y. Q., Kang, M., Fisk, Z., Ronning, F., and Thompson, J. D. Tue . "Low-temperature conducting state in two candidate topological Kondo insulators: SmB6 and Ce3Bi4Pt3". United States. doi:10.1103/PhysRevB.94.035127. https://www.osti.gov/servlets/purl/1414091.
@article{osti_1414091,
title = {Low-temperature conducting state in two candidate topological Kondo insulators: SmB6 and Ce3Bi4Pt3},
author = {Wakeham, N. and Rosa, P. F. S. and Wang, Y. Q. and Kang, M. and Fisk, Z. and Ronning, F. and Thompson, J. D.},
abstractNote = {We have investigated the low temperature conducting state of two Kondo insulators, SmB6 and Ce3Bi4Pt3, which have been theoretically predicted to host topological surface states. Through comparison of the speci c heat of as-grown and powdered single crystals of SmB6, we show that the residual term that is linear in temperature is not dominated by any surface state contribution, but rather is a bulk property. In Ce3Bi4Pt3, we find that the Hall coefficient is independent of sample thickness, which indicates that conduction at low temperatures is dominated by the bulk of the sample, and not by a surface state. The low temperature resistivity of Ce3Bi4Pt3 is found to monotonically decrease with low concentrations of disorder introduced through ion-irradiation. This is in contrast to SmB6, which is again indicative of the contrasting origins of the low temperature conduction. In SmB6, we also show that the effect of low concentrations of irradiation damage of the surface with Fe+ ions is qualitatively consistent with damage with non-magnetic ions.},
doi = {10.1103/PhysRevB.94.035127},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 94,
place = {United States},
year = {2016},
month = {7}
}

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Cited by: 7 works
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