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Title: Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

Abstract

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defectsmore » rapidly grow into extended clusters and/or loops.« less

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2]
  1. Missouri Univ. of Science & Technology, Rolla, MO (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); The Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1413607
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 498; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS

Citation Formats

Graham, Joseph T., Zhang, Yanwen, and Weber, William J. Irradiation-induced defect formation and damage accumulation in single crystal CeO2. United States: N. p., 2017. Web. doi:10.1016/j.jnucmat.2017.09.046.
Graham, Joseph T., Zhang, Yanwen, & Weber, William J. Irradiation-induced defect formation and damage accumulation in single crystal CeO2. United States. doi:10.1016/j.jnucmat.2017.09.046.
Graham, Joseph T., Zhang, Yanwen, and Weber, William J. Wed . "Irradiation-induced defect formation and damage accumulation in single crystal CeO2". United States. doi:10.1016/j.jnucmat.2017.09.046.
@article{osti_1413607,
title = {Irradiation-induced defect formation and damage accumulation in single crystal CeO2},
author = {Graham, Joseph T. and Zhang, Yanwen and Weber, William J.},
abstractNote = {Here, the accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 x 1016 cm–2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.},
doi = {10.1016/j.jnucmat.2017.09.046},
journal = {Journal of Nuclear Materials},
number = C,
volume = 498,
place = {United States},
year = {Wed Nov 15 00:00:00 EST 2017},
month = {Wed Nov 15 00:00:00 EST 2017}
}

Journal Article:
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