skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Authors:
 [1];  [2];  [2];  [3];  [2]; ORCiD logo [4]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, Michigan 49905, USA
  2. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  3. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, Electrical and Computer Engineering Department, University of Florida, Gainesville, Florida 32611, USA
  4. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1413564
Grant/Contract Number:  
EE0005323; FG36-08GO18010
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kendrick, Chito, Kuo, Meng-Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States: N. p., 2017. Web. doi:10.1063/1.4993632.
Kendrick, Chito, Kuo, Meng-Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., & Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States. doi:10.1063/1.4993632.
Kendrick, Chito, Kuo, Meng-Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Thu . "Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride". United States. doi:10.1063/1.4993632.
@article{osti_1413564,
title = {Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride},
author = {Kendrick, Chito and Kuo, Meng-Wei and Li, Jie and Shen, Haoting and Mayer, Theresa S. and Redwing, Joan M.},
abstractNote = {},
doi = {10.1063/1.4993632},
journal = {Journal of Applied Physics},
number = 23,
volume = 122,
place = {United States},
year = {Thu Dec 21 00:00:00 EST 2017},
month = {Thu Dec 21 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4993632

Save / Share:

Works referenced in this record:

Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964

  • Wagner, R. S.; Ellis, W. C.
  • Applied Physics Letters, Vol. 4, Issue 5, p. 89-90
  • DOI: 10.1063/1.1753975

Modulation of Thermoelectric Power Factor via Radial Dopant Inhomogeneity in B-Doped Si Nanowires
journal, August 2014

  • Zhuge, Fuwei; Yanagida, Takeshi; Fukata, Naoki
  • Journal of the American Chemical Society, Vol. 136, Issue 40, p. 14100-14106
  • DOI: 10.1021/ja5055884

Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes
journal, January 2010

  • Boettcher, S. W.; Spurgeon, J. M.; Putnam, M. C.
  • Science, Vol. 327, Issue 5962, p. 185-187
  • DOI: 10.1126/science.1180783

Electric-field assisted assembly and alignment of metallic nanowires
journal, August 2000

  • Smith, Peter A.; Nordquist, Christopher D.; Jackson, Thomas N.
  • Applied Physics Letters, Vol. 77, Issue 9, p. 1399-1401
  • DOI: 10.1063/1.1290272

Controlled Growth of Si Nanowire Arrays for Device Integration
journal, March 2005

  • Hochbaum, Allon I.; Fan, Rong; He, Rongrui
  • Nano Letters, Vol. 5, Issue 3, p. 457-460
  • DOI: 10.1021/nl047990x