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Title: Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Abstract

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.

Authors:
; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1413545
Grant/Contract Number:  
AC0298CH10886
Resource Type:
Journal Article: Published Article
Journal Name:
IUCrJ
Additional Journal Information:
Journal Name: IUCrJ Journal Volume: 5 Journal Issue: 1; Journal ID: ISSN 2052-2525
Publisher:
International Union of Crystallography (IUCr)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, and Zuo, Jian Min. Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain. United Kingdom: N. p., 2018. Web. doi:10.1107/S2052252517016219.
Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, & Zuo, Jian Min. Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain. United Kingdom. doi:10.1107/S2052252517016219.
Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, and Zuo, Jian Min. Mon . "Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain". United Kingdom. doi:10.1107/S2052252517016219.
@article{osti_1413545,
title = {Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain},
author = {Kim, Honggyu and Meng, Yifei and Kwon, Ji-Hwan and Rouviére, Jean-Luc and Zuo, Jian Min},
abstractNote = {Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.},
doi = {10.1107/S2052252517016219},
journal = {IUCrJ},
number = 1,
volume = 5,
place = {United Kingdom},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1107/S2052252517016219

Citation Metrics:
Cited by: 2 works
Citation information provided by
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