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Title: Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Abstract

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.

Authors:
; ; ; ; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1413545
Grant/Contract Number:
AC0298CH10886
Resource Type:
Journal Article: Published Article
Journal Name:
IUCrJ
Additional Journal Information:
Journal Volume: 5; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-05-18 12:14:59; Journal ID: ISSN 2052-2525
Publisher:
International Union of Crystallography (IUCr)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, and Zuo, Jian Min. Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain. United Kingdom: N. p., 2018. Web. doi:10.1107/S2052252517016219.
Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, & Zuo, Jian Min. Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain. United Kingdom. doi:10.1107/S2052252517016219.
Kim, Honggyu, Meng, Yifei, Kwon, Ji-Hwan, Rouviére, Jean-Luc, and Zuo, Jian Min. Mon . "Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain". United Kingdom. doi:10.1107/S2052252517016219.
@article{osti_1413545,
title = {Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain},
author = {Kim, Honggyu and Meng, Yifei and Kwon, Ji-Hwan and Rouviére, Jean-Luc and Zuo, Jian Min},
abstractNote = {Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.},
doi = {10.1107/S2052252517016219},
journal = {IUCrJ},
number = 1,
volume = 5,
place = {United Kingdom},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1107/S2052252517016219

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • We propose a digital model for high quality superlattices by including fluctuations in the superlattice periods. The composition and strain profiles are assumed to be coherent and persist throughout the superlattice. Using this model, we have significantly improved the fit with experimental X-ray diffraction data recorded from the nominal InAs/GaSb superlattice. The lattice spacing of individual layers inside the superlattice and the extent of interfacial intermixing are refined by including both (002) and (004) and their satellite peaks in the fitting. For the InAs/GaSb strained layer superlattice, results show: (i) the GaSb-on-InAs interface is chemically sharper than the InAs-on-GaSb interface,more » (ii) the GaSb layers experience compressive strain with In incorporation, (iii) there are interfacial strain associated with InSb-like bonds in GaSb and GaAs-like bonds in InAs, (iv) Sb substitutes a significant amount of In inside InAs layer near the InAs-on-GaSb interface. For support, we show that the composition profiles determined by X-ray diffraction are in good agreement with those obtained from atom probe tomography measurement. Comparison with the kinetic growth model shows a good agreement in terms of the composition profiles of anions, while the kinetic model underestimates the intermixing of cations.« less
  • To determine the optimum growth temperature for GaInSb/InAs strained layer superlattices (SLS) a series of SLS was grown over the temperature range 357-433 {degrees}C. Temperatures were estimated by determining the absorption spectrum of the GaAs substrate, hence its band gap, and thus its temperature. SLS were evaluated by single crystal x-ray diffraction and interband magnetoabsorption (IMA) measurements. X-ray spectra showed as many as eight peaks due to the superlattice. The quality of the superlattices as indicated by the x-ray data had a well defined maximum between 390 and 410 {degrees}C. IMA measurements indicated band gaps from 85 to 154 meV.more » 15 refs., 2 figs., 1 tab.« less
  • No abstract prepared.
  • We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generallymore » thought to have too small a lattice mismatch.« less
  • The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb{sub 2} atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio atmore » this interface. The results also explain observed X-ray diffraction profiles.« less