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Title: In-plane g factor of low-density two-dimensional holes in a Ge quantum well.

Abstract

High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (g ip) can be vanishingly small while the perpendicular g factor (g z) can be much larger than 2. Here we report the measurement of g ip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.

Authors:
 [1];  [1];  [2];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1413417
Report Number(s):
SAND-2017-13281R
659358
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lu, Tzu-Ming, Harris, Charles Thomas, Huang, Shih-Hsien, Chuang, Yen, Li, Jiun-Yun, and Liu, CheeWee. In-plane g factor of low-density two-dimensional holes in a Ge quantum well.. United States: N. p., 2017. Web. doi:10.2172/1413417.
Lu, Tzu-Ming, Harris, Charles Thomas, Huang, Shih-Hsien, Chuang, Yen, Li, Jiun-Yun, & Liu, CheeWee. In-plane g factor of low-density two-dimensional holes in a Ge quantum well.. United States. doi:10.2172/1413417.
Lu, Tzu-Ming, Harris, Charles Thomas, Huang, Shih-Hsien, Chuang, Yen, Li, Jiun-Yun, and Liu, CheeWee. Fri . "In-plane g factor of low-density two-dimensional holes in a Ge quantum well.". United States. doi:10.2172/1413417. https://www.osti.gov/servlets/purl/1413417.
@article{osti_1413417,
title = {In-plane g factor of low-density two-dimensional holes in a Ge quantum well.},
author = {Lu, Tzu-Ming and Harris, Charles Thomas and Huang, Shih-Hsien and Chuang, Yen and Li, Jiun-Yun and Liu, CheeWee},
abstractNote = {High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (gip) can be vanishingly small while the perpendicular g factor (gz) can be much larger than 2. Here we report the measurement of gip at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.},
doi = {10.2172/1413417},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 2017},
month = {Fri Dec 01 00:00:00 EST 2017}
}

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