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Title: Ultrananocrystalline diamond contacts for electronic devices

Abstract

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

Inventors:
; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1413200
Patent Number(s):
9,842,958
Application Number:
15/339,295
Assignee:
UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY); The Research Foundation for the State University of New York (Albany, NY) BNL
DOE Contract Number:  
AC02-98CH10886; SC0012704; AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 31
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., Smedley, John, and Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States: N. p., 2017. Web.
Sumant, Anirudha V., Smedley, John, & Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States.
Sumant, Anirudha V., Smedley, John, and Muller, Erik. Tue . "Ultrananocrystalline diamond contacts for electronic devices". United States. doi:. https://www.osti.gov/servlets/purl/1413200.
@article{osti_1413200,
title = {Ultrananocrystalline diamond contacts for electronic devices},
author = {Sumant, Anirudha V. and Smedley, John and Muller, Erik},
abstractNote = {A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 12 00:00:00 EST 2017},
month = {Tue Dec 12 00:00:00 EST 2017}
}

Patent:

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