Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Jung, Daehwan; Callahan, Patrick G.; Shin, Bongki; Mukherjee, Kunal; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.5001360

Title: Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Journal Article · Tue Dec 12 00:00:00 EST 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5001360· OSTI ID:1413022

Jung, Daehwan; Callahan, Patrick G.; Shin, Bongki; Mukherjee, Kunal; Gossard, Arthur C.; Bowers, John E.

We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 × 106 cm−2, which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR000067

OSTI ID:: 1413022

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 122 Journal Issue: 22; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 89 works

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References (44)

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging Carnevale, Santino D.; Deitz, Julia I.; Carlin, John A. Applied Physics Letters, Vol. 104, Issue 23 https://doi.org/10.1063/1.4883371	journal	June 2014
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility Alcotte, R.; Martin, M.; Moeyaert, J. APL Materials, Vol. 4, Issue 4 https://doi.org/10.1063/1.4945586	journal	April 2016
Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE Marschner, T.; Stolz, W.; Göbel, E. O. Materials Science and Engineering: B, Vol. 21, Issue 2-3 https://doi.org/10.1016/0921-5107(93)90363-R	journal	November 1993
Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures Carnevale, Santino D.; Deitz, Julia I.; Carlin, John A. IEEE Journal of Photovoltaics, Vol. 5, Issue 2 https://doi.org/10.1109/JPHOTOV.2014.2379111	journal	March 2015
Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures Yastrubchak, O.; Wosi ski, T.; Domaga a., J. Z. Journal of Physics: Condensed Matter, Vol. 16, Issue 2 https://doi.org/10.1088/0953-8984/16/2/001	journal	December 2003
Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100) Wang, W. I. Applied Physics Letters, Vol. 44, Issue 12 https://doi.org/10.1063/1.94673	journal	June 1984
High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si Jung, Daehwan; Norman, Justin; Kennedy, M. J. Applied Physics Letters, Vol. 111, Issue 12 https://doi.org/10.1063/1.4993226	journal	September 2017
GaAsP solar cells on GaP/Si with low threading dislocation density Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan Applied Physics Letters, Vol. 109, Issue 3 https://doi.org/10.1063/1.4959825	journal	July 2016
Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates Lee, J. W.; Shichijo, H.; Tsai, H. L. Applied Physics Letters, Vol. 50, Issue 1 https://doi.org/10.1063/1.98117	journal	January 1987
Material properties of high‐quality GaAs epitaxial layers grown on Si substrates Fischer, R.; Morkoç, H.; Neumann, D. A. Journal of Applied Physics, Vol. 60, Issue 5 https://doi.org/10.1063/1.337253	journal	September 1986
Generation of misfit dislocations in GaAs grown on Si Tsai, H. L.; Matyi, R. J. Applied Physics Letters, Vol. 55, Issue 3 https://doi.org/10.1063/1.101924	journal	July 1989
Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers Jung, Daehwan; Yu, Lan; Wasserman, Daniel Journal of Applied Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.4935418	journal	November 2015
Dislocation filters in GaAs on Si George, I.; Becagli, F.; Liu, H. Y. Semiconductor Science and Technology, Vol. 30, Issue 11 https://doi.org/10.1088/0268-1242/30/11/114004	journal	October 2015
Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001) Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha Electronic Materials Letters, Vol. 12, Issue 3 https://doi.org/10.1007/s13391-016-5318-8	journal	May 2016
Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si Liu, Alan Y.; Peters, Jon; Huang, Xue Optics Letters, Vol. 42, Issue 2 https://doi.org/10.1364/OL.42.000338	journal	January 2017
Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon Liu, Alan Y.; Herrick, Robert W.; Ueda, Osamu IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6 https://doi.org/10.1109/JSTQE.2015.2418226	journal	November 2015
GaAs epitaxy on Si substrates: modern status of research and engineering Bolkhovityanov, Yu B.; Pchelyakov, O. P. Physics-Uspekhi, Vol. 51, Issue 5 https://doi.org/10.1070/PU2008v051n05ABEH006529	journal	May 2008
Dislocation density reduction through annihilation in lattice‐mismatched semiconductors grown by molecular‐beam epitaxy Sheldon, P.; Jones, K. M.; Al‐Jassim, M. M. Journal of Applied Physics, Vol. 63, Issue 11 https://doi.org/10.1063/1.340343	journal	June 1988
Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates Sugo, Mitsuru; Uchida, Naoto; Yamamoto, Akio Journal of Applied Physics, Vol. 65, Issue 2 https://doi.org/10.1063/1.343113	journal	January 1989
Defect reduction effects in GaAs on Si substrates by thermal annealing Yamaguchi, Masafumi; Yamamoto, Akio; Tachikawa, Masami Applied Physics Letters, Vol. 53, Issue 23 https://doi.org/10.1063/1.100257	journal	December 1988
Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging Yaung, Kevin Nay; Kirnstoetter, Stefan; Faucher, Joseph Journal of Crystal Growth, Vol. 453 https://doi.org/10.1016/j.jcrysgro.2016.08.015	journal	November 2016
Dislocations in strained-layer epitaxy: theory, experiment, and applications Fitzgerald, E. A. Materials Science Reports, Vol. 7, Issue 3 https://doi.org/10.1016/0920-2307(91)90006-9	journal	November 1991
Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices Okamoto, Hiroshi; Watanabe, Yoshio; Kadota, Yoshiaki Japanese Journal of Applied Physics, Vol. 26, Issue Part 2, No. 12 https://doi.org/10.1143/JJAP.26.L1950	journal	December 1987
Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy Takano, Y.; Kururi, T.; Kuwahara, K. Applied Physics Letters, Vol. 78, Issue 1 https://doi.org/10.1063/1.1338502	journal	January 2001
Impurity effects on the generation, velocity, and immobilization of dislocations in GaAs Yonenaga, Ichiro; Sumino, Koji Journal of Applied Physics, Vol. 65, Issue 1 https://doi.org/10.1063/1.343380	journal	January 1989
Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices Yamaguchi, Masafumi; Sugo, Mitsuru; Itoh, Yoshio Applied Physics Letters, Vol. 54, Issue 25 https://doi.org/10.1063/1.101052	journal	June 1989
Optical properties of GaAs on (100) Si using molecular beam epitaxy Masselink, W. T.; Henderson, T.; Klem, J. Applied Physics Letters, Vol. 45, Issue 12 https://doi.org/10.1063/1.95130	journal	December 1984
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions Németh, I.; Kunert, B.; Stolz, W. Journal of Crystal Growth, Vol. 310, Issue 7-9 https://doi.org/10.1016/j.jcrysgro.2007.11.127	journal	April 2008
Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates Takano, Y.; Hisaka, M.; Fujii, N. Applied Physics Letters, Vol. 73, Issue 20 https://doi.org/10.1063/1.122629	journal	November 1998
Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates Yamaguchi, Masafumi; Nishioka, Takashi; Sugo, Mitsuru Applied Physics Letters, Vol. 54, Issue 1 https://doi.org/10.1063/1.100819	journal	January 1989
Dislocation reduction in epitaxial GaAs on Si(100) Fischer, R.; Neuman, D.; Zabel, H. Applied Physics Letters, Vol. 48, Issue 18 https://doi.org/10.1063/1.96988	journal	May 1986
Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si Deppe, D. G.; Holonyak, N.; Hsieh, K. C. Applied Physics Letters, Vol. 52, Issue 21 https://doi.org/10.1063/1.99633	journal	May 1988
Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition Soga, Tetsuo; Hattori, Shuzo; Sakai, Shiro Journal of Applied Physics, Vol. 57, Issue 10 https://doi.org/10.1063/1.335363	journal	May 1985
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si Norman, Justin; Kennedy, M. J.; Selvidge, Jennifer Optics Express, Vol. 25, Issue 4 https://doi.org/10.1364/OE.25.003927	journal	January 2017
Computer simulation of threading dislocation density reduction in heteroepitaxial layers Beltz, G. E.; Chang, M.; Speck, J. S. Philosophical Magazine A, Vol. 76, Issue 4 https://doi.org/10.1080/01418619708214212	journal	October 1997
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) Jung, Daehwan; Song, Yuncheng; Lee, Minjoo Electronics Letters, Vol. 50, Issue 17 https://doi.org/10.1049/el.2014.2077	journal	August 2014
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons Spencer, J. P.; Humphreys, C. J.; Hirsch, P. B. Philosophical Magazine, Vol. 26, Issue 1 https://doi.org/10.1080/14786437208221029	journal	July 1972
Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si Farrell, S.; Rao, Mulpuri V.; Brill, G. Journal of Electronic Materials, Vol. 40, Issue 8 https://doi.org/10.1007/s11664-011-1669-y	journal	June 2011
Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates Chen, Siming; Liao, Mengya; Tang, Mingchu Optics Express, Vol. 25, Issue 5 https://doi.org/10.1364/OE.25.004632	journal	January 2017
Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator Chu, S. N. G.; Nakahara, S.; Pearton, S. J. Journal of Applied Physics, Vol. 64, Issue 6 https://doi.org/10.1063/1.341561	journal	September 1988
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD Ishida, Koichi; Akiyama, Masahiro; Nishi, Seiji Japanese Journal of Applied Physics, Vol. 26, Issue Part 2, No. 3 https://doi.org/10.1143/JJAP.26.L163	journal	March 1987
Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers I. Geometry and Crystallography Romanov, A. E.; Pompe, W.; Beltz, G. physica status solidi (b), Vol. 198, Issue 2 https://doi.org/10.1002/pssb.2221980205	journal	December 1996
Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing Asai, Koyu; Katahama, Hisashi; Shiba, Yasunari Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 9A https://doi.org/10.1143/JJAP.33.4843	journal	September 1994
Thermal annealing effects of defect reduction in GaAs on Si substrates Yamaguchi, Masafumi; Tachikawa, Masami; Itoh, Yoshio Journal of Applied Physics, Vol. 68, Issue 9 https://doi.org/10.1063/1.346156	journal	November 1990

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