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Title: Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Authors:
 [1];  [2];  [1];  [2];  [3];  [3]
  1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
  2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA, Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1413022
Grant/Contract Number:  
AR000067
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., and Bowers, John E. Low threading dislocation density GaAs growth on on-axis GaP/Si (001). United States: N. p., 2017. Web. doi:10.1063/1.5001360.
Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., & Bowers, John E. Low threading dislocation density GaAs growth on on-axis GaP/Si (001). United States. doi:10.1063/1.5001360.
Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., and Bowers, John E. Thu . "Low threading dislocation density GaAs growth on on-axis GaP/Si (001)". United States. doi:10.1063/1.5001360.
@article{osti_1413022,
title = {Low threading dislocation density GaAs growth on on-axis GaP/Si (001)},
author = {Jung, Daehwan and Callahan, Patrick G. and Shin, Bongki and Mukherjee, Kunal and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.5001360},
journal = {Journal of Applied Physics},
number = 22,
volume = 122,
place = {United States},
year = {Thu Dec 14 00:00:00 EST 2017},
month = {Thu Dec 14 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 12, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

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