skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tunable Nitride Josephson Junctions.

Abstract

We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1412824
Report Number(s):
SAND-2017-12990
659307
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, and Wolak, Matthaeus. Tunable Nitride Josephson Junctions.. United States: N. p., 2017. Web. doi:10.2172/1412824.
Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, & Wolak, Matthaeus. Tunable Nitride Josephson Junctions.. United States. doi:10.2172/1412824.
Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, and Wolak, Matthaeus. Fri . "Tunable Nitride Josephson Junctions.". United States. doi:10.2172/1412824. https://www.osti.gov/servlets/purl/1412824.
@article{osti_1412824,
title = {Tunable Nitride Josephson Junctions.},
author = {Missert, Nancy A. and Henry, Michael David and Lewis, Rupert M. and Howell, Stephen W. and Wolfley, Steven L. and Brunke, Lyle Brent and Wolak, Matthaeus},
abstractNote = {We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.},
doi = {10.2172/1412824},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 2017},
month = {Fri Dec 01 00:00:00 EST 2017}
}

Technical Report:

Save / Share: