Tunable Nitride Josephson Junctions.
Abstract
We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1412824
- Report Number(s):
- SAND-2017-12990
659307
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, and Wolak, Matthaeus. Tunable Nitride Josephson Junctions.. United States: N. p., 2017.
Web. doi:10.2172/1412824.
Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, & Wolak, Matthaeus. Tunable Nitride Josephson Junctions.. United States. https://doi.org/10.2172/1412824
Missert, Nancy A., Henry, Michael David, Lewis, Rupert M., Howell, Stephen W., Wolfley, Steven L., Brunke, Lyle Brent, and Wolak, Matthaeus. 2017.
"Tunable Nitride Josephson Junctions.". United States. https://doi.org/10.2172/1412824. https://www.osti.gov/servlets/purl/1412824.
@article{osti_1412824,
title = {Tunable Nitride Josephson Junctions.},
author = {Missert, Nancy A. and Henry, Michael David and Lewis, Rupert M. and Howell, Stephen W. and Wolfley, Steven L. and Brunke, Lyle Brent and Wolak, Matthaeus},
abstractNote = {We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.},
doi = {10.2172/1412824},
url = {https://www.osti.gov/biblio/1412824},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 2017},
month = {Fri Dec 01 00:00:00 EST 2017}
}
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