skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1412083
Report Number(s):
SAND2016-12249PE
649646
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the NIF Diagnostics Workshop held November 29-30, 2016 in Livermore, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Looker, Quinn Michael, Keeler, Gordon Arthur, Robertson, Gideon, Kim, Jin K., Long, Joel, Sanchez, Marcos O., Trotter, Douglas Chandler, Porter, John L., and Rochau, Gregory A.. Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.. United States: N. p., 2016. Web.
Looker, Quinn Michael, Keeler, Gordon Arthur, Robertson, Gideon, Kim, Jin K., Long, Joel, Sanchez, Marcos O., Trotter, Douglas Chandler, Porter, John L., & Rochau, Gregory A.. Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.. United States.
Looker, Quinn Michael, Keeler, Gordon Arthur, Robertson, Gideon, Kim, Jin K., Long, Joel, Sanchez, Marcos O., Trotter, Douglas Chandler, Porter, John L., and Rochau, Gregory A.. Thu . "Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.". United States. doi:. https://www.osti.gov/servlets/purl/1412083.
@article{osti_1412083,
title = {Semiconductor Detectors for Sub-ns Detection of 20-70 keV X-Rays.},
author = {Looker, Quinn Michael and Keeler, Gordon Arthur and Robertson, Gideon and Kim, Jin K. and Long, Joel and Sanchez, Marcos O. and Trotter, Douglas Chandler and Porter, John L. and Rochau, Gregory A.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 2016},
month = {Thu Dec 01 00:00:00 EST 2016}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Results of measurements of the absolute spectral sensitivity of silicon semiconductor detectors for 7--20 keV x rays are presented. Synchrotron radiation from a 2-T wiggler, installed at the VEPP-3 storage ring, was used for this study. Two quite different approaches were applied to measure the detector spectral sensitivity. According to the first approach, the measurements were performed in monochromatic radiation. The absolute photon flux was determined by a scintillation counter with known detection efficiency and monitored by a transmission ionization chamber. The second approach corresponds to the measurements in a white'' synchrotron radiation beam through sets of known absorption filtersmore » and via the following unfolding of the spectral sensitivity from a set of integral equations. The experimental results obtained by both procedures are in good agreement. The accuracy of the experimental calibration procedures is assumed to be not worse than 10%.« less
  • Spectroscopy of ion-induced x rays is commonly performed using lithium-drifted, silicon detectors, Si(Li), with beryllium windows. Strong absorption of x rays with energies below 1 keV occurs in even the thinnest commercially available beryllium windows and precludes useful analysis of sub-keV x rays. Access to the sub-keV x ray region can be achieved using windowless (WL) and ultra-thin-windowed (UTW) Si(Li) detectors. These detectors have been shown to be useful for spectroscopy of x rays with energies above approximately 200 eV. The properties of such detectors are reviewed with regard to analysis of ion-induced x rays. In particular, considerations of detectionmore » efficiency, output linearity, energy resolution, peak shapes, and vacuum requirements are presented. The use of ion excitation for determination of many detector properties serves to demonstrate the usefulness of WL and UTW detectors for the spectroscopy of sub-keV, ion-induced x rays. 23 refs., 4 figs.« less
  • We present results of Monte Carlo simulations of microchannel plate (MCP) response to x-rays in the 250 eV to 20 keV energy range as a function of both x-ray energy and impact angle. The model is based on the model presented in Rochau et al. (2006). However, while the Rochau et al. (2006) model was two-dimensional, and their results only went to 5 keV, our results have been expanded to 20 keV, and our model has been incorporated into a three-dimensional Monte Carlo MCP model that we have developed over the past several years (Kruschwitz et al. 2011). X-ray penetrationmore » through multiple MCP pore walls is increasingly important above 5 keV. The effect of x-ray penetration through multiple pores on MCP performance was studied and is presented.« less
  • Preliminary investigations were carried out to evaluate the resolution of Cd{sub 1{minus}x}Zn{sub x}Te detectors at temperatures achievable with commercially available, low power Peltier refrigerators. Detectors were in the form of cubes, 2 mm on a side. They were tested using a preamplifier with optical feedback. The input FET was cooled along with the detectors. Resolutions of 409 eV and 326 eV were observed at the 5.9 keV line of Fe-55, at temperatures of {minus}10 C and {minus}20 C, respectively. Results indicate that a straightforward extension of this work will lead to resolutions well below 200 eV.