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Title: Investigation of partitionless growth of ε-Al60Sm11 phase in Al-10 at% Sm liquid

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1411952
Report Number(s):
IS-J 9500
Journal ID: ISSN 0965-0393; TRN: US1800288
Grant/Contract Number:
AC02-07CH11358; 11574289
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Modelling and Simulation in Materials Science and Engineering
Additional Journal Information:
Journal Volume: 26; Journal Issue: 1; Journal ID: ISSN 0965-0393
Country of Publication:
United States
Language:
English

Citation Formats

Hanrahan, Michael, Fought, Ellie L, Windus, Theresa, Wheeler, Lance, Anderson, Nicholas, Neale, Nathan, and Rossini, Aaron. Investigation of partitionless growth of ε-Al60Sm11 phase in Al-10 at% Sm liquid. United States: N. p., 2018. Web. doi:10.1088/1361-651X/aa9747.
Hanrahan, Michael, Fought, Ellie L, Windus, Theresa, Wheeler, Lance, Anderson, Nicholas, Neale, Nathan, & Rossini, Aaron. Investigation of partitionless growth of ε-Al60Sm11 phase in Al-10 at% Sm liquid. United States. doi:10.1088/1361-651X/aa9747.
Hanrahan, Michael, Fought, Ellie L, Windus, Theresa, Wheeler, Lance, Anderson, Nicholas, Neale, Nathan, and Rossini, Aaron. 2018. "Investigation of partitionless growth of ε-Al60Sm11 phase in Al-10 at% Sm liquid". United States. doi:10.1088/1361-651X/aa9747.
@article{osti_1411952,
title = {Investigation of partitionless growth of ε-Al60Sm11 phase in Al-10 at% Sm liquid},
author = {Hanrahan, Michael and Fought, Ellie L and Windus, Theresa and Wheeler, Lance and Anderson, Nicholas and Neale, Nathan and Rossini, Aaron},
abstractNote = {},
doi = {10.1088/1361-651X/aa9747},
journal = {Modelling and Simulation in Materials Science and Engineering},
number = 1,
volume = 26,
place = {United States},
year = 2018,
month = 1
}

Journal Article:
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  • The Potts model was used to study grain growth in liquid phase sintered materials. Its application to the study of isotropic grain growth by Ostwald ripening in a fully wetting system will be presented. The interpretation of the simulation results will be described and discussed. It was found that the set of simulation parameters used gave diffusion-controlled grain growth for solid fraction ranging from 0.30 to 0.90. The grain size distribution varied with solid fraction, becoming broader and more peaked with increasing solid fraction. The skewness was near zero at solid fraction of 0.41 and shifted to larger grain sizesmore » with increasing solid fraction. This shift in the skewness of grain size distribution is not predicted by previous analytical or numerical models; however, it is consistent with experimental data collected by Fang and Patterson in the W-Ni-Fe system.« less
  • A controllable method to supply solute elements into growth solutions was developed by using a source currentcontrolled (SCC) method. A dc electric current was passed through a binary semiconductor compound used as the source material for solute elements. It was found that the source compound could be dissolved into even a saturated solution due to Peltier heating and Joule heating at the interface between the source compound and the solution, and that the composition of growing crystals could be controlled by the electric current passed through the source compound. The SCC method was demonstrated by the liquid-phase epitaxial growth ofmore » In /SUB 1-x/ Ga /SUB x/ As on InP. GaAs and InAs were used as source compounds.« less
  • The authors experimentally and mathematically study the kinetics of compaction and grain growth in the liquid-phase sintering of a tungsten-20% copper refractory, using scanning and transmission electron microscopy and accounting for such factors as the solubility and diffusion of tungsten in copper, the viscosity and wettability of the liquid refractory, and the time dependence of the ultimate porosity of the alloy. They conclude that the kinetics of tungsten grain growth during sintering and compaction is determined by a process of transport of the refractory component through the liquid phase.
  • The liquidus isotherms of the In-Ga-As system were determined at 600/sup 0/ and 700/sup 0/C by the improved seed dissolution technique. From the results of the liquidus isotherms and the lattice-constant measurements, the substrate orientation dependence of solution compositions to grow lattice-matched In /sub 0.53/ Ga /sub 0.47/ As layers on the (100), (111)A, and (111)B InP substrates by liquid phase epitaxy (LPE) was exactly obtained in the temperature range 600/sup 0/-790/sup 0/C. The solution compositions of Ga for the (111)A and (111)B faces are always larger than those for the (100) face over the entire temperature range 600/sup 0/-790/supmore » 0/C. The solution compositions of As for the (111)A and (111)B faces are always smaller than those for the (100) face over the entire temperature range 600/sup 0/-790/sup 0/C. In order to study effects of the surface free energy on the InGa-As phase diagram which was determined by using the LPE method, the In-Ga-As phase diagram was calculated, for the first time, by adding the surface free energy to the chemical free energy of the In /sub 1-x/ Ga /sub x/ As solid phase. According to the calculated phase diagram, the composition of Ga in the solution to obtain the (111) oriented In /sub 0.53/ Ga /sub 0.47/ As is smaller than the composition of Ga in the solution to obtain the (100)-oriented In /sub 0.53/ Ga /SUB 0.47/ As. This tendency of the calculated results is contrary to the experimental results. That is to say, the difference in the surface free energy is not a main reason for the substrate orientation dependence of the In-Ga-As phase diagram.« less