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Title: All-optical lithography process for contacting nanometer precision donor devices

Abstract

In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
OSTI Identifier:
1411615
Alternate Identifier(s):
OSTI ID: 1407437; OSTI ID: 1421616
Report Number(s):
SAND2017-10812J; SAND-2017-8191J
Journal ID: ISSN 0003-6951; 657591; TRN: US1800252
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Photolithography; Circuits; Scanning tunnelling microscopy; Chemical compounds; Nano-wires

Citation Formats

Ward, Daniel Robert, Marshall, Michael Thomas, Campbell, DeAnna Marie, Lu, Tzu-Ming, Koepke, Justin C., Scrymgeour, David A., Bussmann, Ezra, and Misra, Shashank. All-optical lithography process for contacting nanometer precision donor devices. United States: N. p., 2017. Web. doi:10.1063/1.4998639.
Ward, Daniel Robert, Marshall, Michael Thomas, Campbell, DeAnna Marie, Lu, Tzu-Ming, Koepke, Justin C., Scrymgeour, David A., Bussmann, Ezra, & Misra, Shashank. All-optical lithography process for contacting nanometer precision donor devices. United States. doi:10.1063/1.4998639.
Ward, Daniel Robert, Marshall, Michael Thomas, Campbell, DeAnna Marie, Lu, Tzu-Ming, Koepke, Justin C., Scrymgeour, David A., Bussmann, Ezra, and Misra, Shashank. Mon . "All-optical lithography process for contacting nanometer precision donor devices". United States. doi:10.1063/1.4998639.
@article{osti_1411615,
title = {All-optical lithography process for contacting nanometer precision donor devices},
author = {Ward, Daniel Robert and Marshall, Michael Thomas and Campbell, DeAnna Marie and Lu, Tzu-Ming and Koepke, Justin C. and Scrymgeour, David A. and Bussmann, Ezra and Misra, Shashank},
abstractNote = {In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.},
doi = {10.1063/1.4998639},
journal = {Applied Physics Letters},
number = 19,
volume = 111,
place = {United States},
year = {Mon Nov 06 00:00:00 EST 2017},
month = {Mon Nov 06 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 6, 2018
Publisher's Version of Record

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Cited by: 1 work
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