Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage
Abstract
As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1411609
- Report Number(s):
- SAND-2017-7259J
Journal ID: ISSN 0018-9499; 655204; TRN: US1800247
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- IEEE Transactions on Nuclear Science
- Additional Journal Information:
- Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; 42 ENGINEERING; Heterojunction Bipolar Transistors; displacement damage; single particle events; binary collision approximation
Citation Formats
Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon A. Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage. United States: N. p., 2017.
Web. doi:10.1109/tns.2017.2772960.
Vizkelethy, Gyorgy, Bielejec, Edward S., & Aguirre, Brandon A. Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage. United States. https://doi.org/10.1109/tns.2017.2772960
Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon A. 2017.
"Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage". United States. https://doi.org/10.1109/tns.2017.2772960. https://www.osti.gov/servlets/purl/1411609.
@article{osti_1411609,
title = {Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage},
author = {Vizkelethy, Gyorgy and Bielejec, Edward S. and Aguirre, Brandon A.},
abstractNote = {As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.},
doi = {10.1109/tns.2017.2772960},
url = {https://www.osti.gov/biblio/1411609},
journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 1,
volume = 65,
place = {United States},
year = {Mon Nov 13 00:00:00 EST 2017},
month = {Mon Nov 13 00:00:00 EST 2017}
}
Web of Science