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Title: Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage

Abstract

As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.

Authors:
 [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411609
Report Number(s):
SAND-2017-7259J
Journal ID: ISSN 0018-9499; 655204; TRN: US1800247
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 42 ENGINEERING; Heterojunction Bipolar Transistors; displacement damage; single particle events; binary collision approximation

Citation Formats

Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon A. Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage. United States: N. p., 2017. Web. doi:10.1109/tns.2017.2772960.
Vizkelethy, Gyorgy, Bielejec, Edward S., & Aguirre, Brandon A. Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage. United States. doi:10.1109/tns.2017.2772960.
Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon A. Mon . "Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage". United States. doi:10.1109/tns.2017.2772960.
@article{osti_1411609,
title = {Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage},
author = {Vizkelethy, Gyorgy and Bielejec, Edward S. and Aguirre, Brandon A.},
abstractNote = {As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.},
doi = {10.1109/tns.2017.2772960},
journal = {IEEE Transactions on Nuclear Science},
number = 1,
volume = 65,
place = {United States},
year = {Mon Nov 13 00:00:00 EST 2017},
month = {Mon Nov 13 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 13, 2018
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