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Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Abstract

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [2];  [1]
  1. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411606
Report Number(s):
SAND2017-6813J
Journal ID: ISSN 0021-8979; 654869; TRN: US1800245
Grant/Contract Number:
AC04-94AL85000; NA0003525; W911NF-10-1-0524
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States: N. p., 2018. Web. doi:10.1063/1.4993673.
Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., & Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States. doi:10.1063/1.4993673.
Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sat . "Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb". United States. doi:10.1063/1.4993673.
@article{osti_1411606,
title = {Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb},
author = {Kim, Honggyu and Meng, Yifei and Klem, John F. and Hawkins, Samuel D. and Kim, Jin K. and Zuo, Jian-Min},
abstractNote = {Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.},
doi = {10.1063/1.4993673},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {Sat Apr 28 00:00:00 EDT 2018},
month = {Sat Apr 28 00:00:00 EDT 2018}
}

Journal Article:
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  • Cyclotron resonance (CR) of two-dimensional holes is observed in the magneto transmission of circularly polarized far-infrared radiation through two InAs{sub 0.15}Sb{sub 0.85}/InSb strained-layer superlattice samples at 4.2 K. Effective masses are (0.034{plus minus}0.004){ital m}{sub {ital e}} and (0.054{plus minus}0.006){ital m}{sub {ital e}} at a hole density of 9.4{times}10{sup 10}/cm{sup 2} per quantum well. This observation is direct evidence that the energy-band line-up of the InAs{sub 0.15}Sb{sub 0.85}/InSb strained-layer superlattice is type II. In addition, a spin resonance is observed in the hole CR-inactive polarization from which an effective {ital g} factor of 140 is deduced.
  • Both large photoconductive gain and long wavelength photoresponse were observed in lateral photodetectors constructed from type II, InAsSb, strained-layer superlattices. In a novel, four-layer superlattice, gain values as large as 90 are reported with a long wavelength cutoff of 8.7 ..mu..m at 77 K. The gain is sensitive to the structure and composition of the superlattice, and the sweepout of minority carriers is eliminated with the appropriate contacts.
  • The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 {mu}m with 80 {mu}W of power at 300 K and 200 mA average current. The laser displayed 3.86 {mu}m emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K. {copyright} {ital 1997 American Institute of Physics.}
  • A photodiode consisting of a p-n junction embedded in an InAs/sub 0.09/Sb/sub 0.91//InSb strained-layer superlattice with equal 130-A-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 ..mu..m at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3 x 10/sup 9/ cm Hz/sup 1//sup ///sup 2//W) at 7 ..mu..m that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
  • An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.