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Title: Maskless regrowth of GaN for trenched devices by MOCVD

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1411489
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Related Information: CHORUS Timestamp: 2017-12-06 10:40:08; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD. United States: N. p., 2017. Web. doi:10.1063/1.5003257.
Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, & Mishra, Umesh K. Maskless regrowth of GaN for trenched devices by MOCVD. United States. doi:10.1063/1.5003257.
Agarwal, Anchal, Koksaldi, Onur, Gupta, Chirag, Keller, Stacia, and Mishra, Umesh K. Mon . "Maskless regrowth of GaN for trenched devices by MOCVD". United States. doi:10.1063/1.5003257.
@article{osti_1411489,
title = {Maskless regrowth of GaN for trenched devices by MOCVD},
author = {Agarwal, Anchal and Koksaldi, Onur and Gupta, Chirag and Keller, Stacia and Mishra, Umesh K.},
abstractNote = {},
doi = {10.1063/1.5003257},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 6, 2018
Publisher's Accepted Manuscript

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