Top-gate organic field-effect transistors fabricated on paper with high operational stability

Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Chou, Wen-Fang; Kippelen, Bernard

doi:10.1016/j.orgel.2016.11.026

Title: Top-gate organic field-effect transistors fabricated on paper with high operational stability

Journal Article · Sat Nov 26 00:00:00 EST 2016 · Organic Electronics

DOI:https://doi.org/10.1016/j.orgel.2016.11.026· OSTI ID:1579804

Wang, Cheng-Yin ^[1]; Fuentes-Hernandez, Canek ^[1];

^[1];

^[1]

Georgia Inst. of Technology, Atlanta, GA (United States)

We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat™ HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 ± 1.1 × 10^–1 cm²/Vs, average threshold voltage values of –1.4 ± 0.2 V, and average on/off current ratio of 10⁵. OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at V_DS = V_GS = –10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. Here, the performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0004946; N00014-04-1-0313; 13-JV-11111129-079

OSTI ID:: 1579804

Alternate ID(s):: OSTI ID: 1411455

Journal Information:: Organic Electronics, Vol. 41, Issue C; ISSN 1566-1199

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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Paper in Electronic and Optoelectronic Devices Ha, Dongheon; Fang, Zhiqiang; Zhitenev, Nikolai B. Advanced Electronic Materials, Vol. 4, Issue 5 https://doi.org/10.1002/aelm.201700593	journal	March 2018
In situ PTCDI-aided lateral crystallization of benzothieno-benzothiophene derivative for photoresponsive organic ambipolar devices Tarsoly, Gergely; Park, Sunghwi; Pyo, Seungmoon Journal of Materials Chemistry C, Vol. 7, Issue 37 https://doi.org/10.1039/c9tc03390d	journal	January 2019
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Title: Top-gate organic field-effect transistors fabricated on paper with high operational stability

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