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Title: Actinide oxide photodiode and nuclear battery

Abstract

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

Inventors:
;
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1411392
Patent Number(s):
9,837,564
Application Number:
15/274,152
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) LANL
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Sep 23
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE

Citation Formats

Sykora, Milan, and Usov, Igor. Actinide oxide photodiode and nuclear battery. United States: N. p., 2017. Web.
Sykora, Milan, & Usov, Igor. Actinide oxide photodiode and nuclear battery. United States.
Sykora, Milan, and Usov, Igor. Tue . "Actinide oxide photodiode and nuclear battery". United States. doi:. https://www.osti.gov/servlets/purl/1411392.
@article{osti_1411392,
title = {Actinide oxide photodiode and nuclear battery},
author = {Sykora, Milan and Usov, Igor},
abstractNote = {Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 05 00:00:00 EST 2017},
month = {Tue Dec 05 00:00:00 EST 2017}
}

Patent:

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