Actinide oxide photodiode and nuclear battery
Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 9,837,564
- Application Number:
- 15/274,152
- OSTI ID:
- 1411392
- Resource Relation:
- Patent File Date: 2016 Sep 23
- Country of Publication:
- United States
- Language:
- English
Fabricating electronic devices using actinide oxide semiconductor materials
|
patent | May 2004 |
Method For Producing Compound Semiconductor Light-Emiting Device
|
patent-application | April 2012 |
Actinide Oxide Structures For Monitoring A Radioactive Environment Wirelessly
|
patent-application | September 2014 |
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