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Title: GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Authors:
 [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [2];  [2]; ORCiD logo [1]
  1. NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623, USA
  2. Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1411283
Grant/Contract Number:  
EE0004946 / 60964954- 51077
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., and Hubbard, Seth M. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell. United States: N. p., 2017. Web. doi:10.1063/1.4991548.
Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., & Hubbard, Seth M. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell. United States. doi:10.1063/1.4991548.
Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., and Hubbard, Seth M. Mon . "GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell". United States. doi:10.1063/1.4991548.
@article{osti_1411283,
title = {GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell},
author = {Nelson, George T. and Juang, Bor-Chau and Slocum, Michael A. and Bittner, Zachary S. and Laghumavarapu, Ramesh B. and Huffaker, Diana L. and Hubbard, Seth M.},
abstractNote = {},
doi = {10.1063/1.4991548},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4991548

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

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Works referenced in this record:

High-efficiency GaInP?GaAs?InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007

  • Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
  • Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
  • DOI: 10.1063/1.2753729