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Title: Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [4]; ORCiD logo [2];  [4];  [4]; ORCiD logo [4];  [2];  [2]
  1. Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, USA, Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11794, USA
  2. Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, USA
  3. Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11794, USA
  4. National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1411282
Grant/Contract Number:
SC00122704
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Related Information: CHORUS Timestamp: 2017-12-05 09:49:29; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., and Liu, Mingzhao. Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering. United States: N. p., 2017. Web. doi:10.1063/1.5001043.
Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., & Liu, Mingzhao. Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering. United States. doi:10.1063/1.5001043.
Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., and Liu, Mingzhao. 2017. "Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering". United States. doi:10.1063/1.5001043.
@article{osti_1411282,
title = {Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering},
author = {Yan, Danhua and Zhang, Wenrui and Cen, Jiajie and Stavitski, Eli and Sadowski, Jerzy T. and Vescovo, Elio and Walter, Andrew and Attenkofer, Klaus and Stacchiola, Darío J. and Liu, Mingzhao},
abstractNote = {},
doi = {10.1063/1.5001043},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 5, 2018
Publisher's Accepted Manuscript

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  • We investigated the photoluminescence properties of ZnO nanowires coated with Au, Ag, and Pt nanoparticles deposited by dc sputtering. A strong enhancement of the near-band-edge emission was observed in all metal-coated samples but also if the samples were treated with Ar plasma without any nanoparticle deposition. High-resolution photoluminescence spectroscopy revealed hydrogen-donor-bound-exciton emission in all samples indicating unintentional hydrogen incorporation. A shorter decay time of the near-band-edge emission was observed in all cases. The results indicate that unintentional hydrogen incorporation plays a dominant role when metal deposition is performed by sputtering.
  • High purity CuInSe{sub 2} heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix. {copyright} {ital 1997 American Institute of Physics.}
  • We present results of pressure-dependent photoluminescence (PL) studies of single-crystal Al{sub x}Ga{sub 1{minus}x}N epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the Al{sub x}Ga{sub 1{minus}x}N epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct {Gamma} band gap of Al{sub x}Ga{sub 1{minus}x}N were determined. Our results yield a pressuremore » coefficient of 4.0{times}10{sup {minus}3}eV/kbar for Al{sub 0.05}Ga{sub 0.95}N and 3.6{times}10{sup {minus}3}eV/kbar for Al{sub 0.35}Ga{sub 0.65}N. {copyright} {ital 1998 American Institute of Physics.}« less
  • No abstract prepared.
  • The temperature and pressure dependences of band-edge photoluminescence from ZnO mico-rods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of kBT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively.