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Title: Thermally activated diffusion of copper into amorphous carbon

Abstract

Using x-ray photoelectron spectroscopy, the authors characterize the thermally activated changes that occur when Cu is deposited on amorphous carbon supported on Si at 300 K, then heated to 800 K. The authors compare data for Cu on the basal plane of graphite with pinning defects, where scanning tunneling microscopy reveals that coarsening is the main process in this temperature range. Coarsening begins at 500–600 K and causes moderate attenuation of the Cu photoelectron signal. For Cu on amorphous carbon, heating to 800 K causes Cu to diffuse into the bulk of the film, based on the strong attenuation of the Cu signal. Diffusion into the bulk of the amorphous carbon film is confirmed by changes in the shape of the Cu 2 p inelastic tail, and by comparison of attenuation between Cu 2 p and Cu 3 p lines. The magnitude of the photoelectron signal attenuation is compatible with Cu distributed homogeneously throughout the amorphous carbon film, and is not compatible with Cu at or below the C–Si interface under the conditions of our experiments. As a result, desorption is not significant at temperatures up to 800 K.

Authors:
 [1];  [2];  [1];  [3];  [1];  [4];  [1]
  1. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  2. Ames Lab., Ames, IA (United States); Mantis Deposition, Inc., Denver, CO (United States)
  3. Ames Lab., Ames, IA (United States)
  4. Max Planck Institute for Intelligent Systems, Stuttgart (Germany)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1411175
Report Number(s):
IS-J-9513
Journal ID: ISSN 0734-2101
Grant/Contract Number:
AC02-07CH11358
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 35; Journal Issue: 6; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Appy, David, Wallingford, Mark, Jing, Dapeng, Ott, Ryan, Tringides, Michael C., Richter, Gunther, and Thiel, Patricia A. Thermally activated diffusion of copper into amorphous carbon. United States: N. p., 2017. Web. doi:10.1116/1.4991519.
Appy, David, Wallingford, Mark, Jing, Dapeng, Ott, Ryan, Tringides, Michael C., Richter, Gunther, & Thiel, Patricia A. Thermally activated diffusion of copper into amorphous carbon. United States. doi:10.1116/1.4991519.
Appy, David, Wallingford, Mark, Jing, Dapeng, Ott, Ryan, Tringides, Michael C., Richter, Gunther, and Thiel, Patricia A. 2017. "Thermally activated diffusion of copper into amorphous carbon". United States. doi:10.1116/1.4991519.
@article{osti_1411175,
title = {Thermally activated diffusion of copper into amorphous carbon},
author = {Appy, David and Wallingford, Mark and Jing, Dapeng and Ott, Ryan and Tringides, Michael C. and Richter, Gunther and Thiel, Patricia A.},
abstractNote = {Using x-ray photoelectron spectroscopy, the authors characterize the thermally activated changes that occur when Cu is deposited on amorphous carbon supported on Si at 300 K, then heated to 800 K. The authors compare data for Cu on the basal plane of graphite with pinning defects, where scanning tunneling microscopy reveals that coarsening is the main process in this temperature range. Coarsening begins at 500–600 K and causes moderate attenuation of the Cu photoelectron signal. For Cu on amorphous carbon, heating to 800 K causes Cu to diffuse into the bulk of the film, based on the strong attenuation of the Cu signal. Diffusion into the bulk of the amorphous carbon film is confirmed by changes in the shape of the Cu 2p inelastic tail, and by comparison of attenuation between Cu 2p and Cu 3p lines. The magnitude of the photoelectron signal attenuation is compatible with Cu distributed homogeneously throughout the amorphous carbon film, and is not compatible with Cu at or below the C–Si interface under the conditions of our experiments. As a result, desorption is not significant at temperatures up to 800 K.},
doi = {10.1116/1.4991519},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 35,
place = {United States},
year = 2017,
month = 7
}

Journal Article:
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