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Title: Observation of fractional quantum Hall effect in an InAs quantum well

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1411109
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 24; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., and Shayegan, M.. Observation of fractional quantum Hall effect in an InAs quantum well. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.241301.
Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., & Shayegan, M.. Observation of fractional quantum Hall effect in an InAs quantum well. United States. doi:10.1103/PhysRevB.96.241301.
Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., and Shayegan, M.. Mon . "Observation of fractional quantum Hall effect in an InAs quantum well". United States. doi:10.1103/PhysRevB.96.241301.
@article{osti_1411109,
title = {Observation of fractional quantum Hall effect in an InAs quantum well},
author = {Ma, Meng K. and Hossain, Md. Shafayat and Villegas Rosales, K. A. and Deng, H. and Tschirky, T. and Wegscheider, W. and Shayegan, M.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.241301},
journal = {Physical Review B},
number = 24,
volume = 96,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 4, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

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