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Title: Observation of fractional quantum Hall effect in an InAs quantum well

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1411109
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 24; Related Information: CHORUS Timestamp: 2017-12-04 10:31:09; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., and Shayegan, M.. Observation of fractional quantum Hall effect in an InAs quantum well. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.241301.
Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., & Shayegan, M.. Observation of fractional quantum Hall effect in an InAs quantum well. United States. doi:10.1103/PhysRevB.96.241301.
Ma, Meng K., Hossain, Md. Shafayat, Villegas Rosales, K. A., Deng, H., Tschirky, T., Wegscheider, W., and Shayegan, M.. 2017. "Observation of fractional quantum Hall effect in an InAs quantum well". United States. doi:10.1103/PhysRevB.96.241301.
@article{osti_1411109,
title = {Observation of fractional quantum Hall effect in an InAs quantum well},
author = {Ma, Meng K. and Hossain, Md. Shafayat and Villegas Rosales, K. A. and Deng, H. and Tschirky, T. and Wegscheider, W. and Shayegan, M.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.241301},
journal = {Physical Review B},
number = 24,
volume = 96,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 4, 2018
Publisher's Accepted Manuscript

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  • We report the observation of an even-denominator fractional quantum Hall state at {nu}=1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n{sub e}=2.55 x 10{sup 11} cm{sup -2}. We have performed transport measurements at T{approx}35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at {nu}=1/4. Upon tilting the sample to an angle of {theta}=20.3{sup o} a clear fractional quantum Hall state emerges at {nu}=1/4 with a plateau in themore » Hall resistance and a strong minimum in the diagonal resistance.« less
  • It is shown that properly accounting for the magnetic compressibility of the two-dimensional electron system can lead to a monotonic quantum Hall coefficient with rational step heights. 15 references.
  • Hall sensors with cross width of {approx}1 {micro}m were fabricated from InAs/AlSb quantum well semiconductor heterostructures containing two-dimensional electron gas. The room-temperature device characteristics were examined by Hall effect and electronic noise measurements along with analytical calculations. In the low-frequency range, from 20 Hz to 1.6 kHz, the noise-equivalent magnetic field resolution was found to be limited by 1/f and generation-recombination noise from 22 to 3.5 {micro}T/{radical}Hz. The corresponding noise-equivalent magnetic moment resolution reached 10{sub {mu}{sub B}}{sup 6}/{radical}Hz at {approx}700 Hz and was even lower at higher frequencies. Using a phase-sensitive measurement technique, detection of a single 1.2 {micro}m diametermore » bead, suitable for biological applications, was achieved with a signal to noise ratio of {approx}33.3 dB, as well as detection of six 250 nm beads with a signal to noise of {approx}2.3 dB per bead. The work demonstrates the efficacy of InAs quantum well Hall devices for application in high sensitivity detection of single magnetic biomolecular labels.« less