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Title: Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma-enhanced chemical vapor deposition

Authors:
 [1];  [2]; ORCiD logo [3];  [3];  [4];  [3]; ORCiD logo [1]
  1. Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis California
  2. Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis California, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an China
  3. Department of Chemistry and Biochemistry, Brigham Young University, Provo Utah
  4. Logic Technology Development, Intel Corporation, Hillsboro Oregon
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1411087
Grant/Contract Number:
SC0016446
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Related Information: CHORUS Timestamp: 2017-12-01 23:13:19; Journal ID: ISSN 0002-7820
Publisher:
Wiley-Blackwell
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Jiewei, Niu, Min, Calvin, Jason, Asplund, Megan, King, Sean W., Woodfield, Brian F., and Navrotsky, Alexandra. Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma-enhanced chemical vapor deposition. United States: N. p., 2017. Web. doi:10.1111/jace.15350.
Chen, Jiewei, Niu, Min, Calvin, Jason, Asplund, Megan, King, Sean W., Woodfield, Brian F., & Navrotsky, Alexandra. Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma-enhanced chemical vapor deposition. United States. doi:10.1111/jace.15350.
Chen, Jiewei, Niu, Min, Calvin, Jason, Asplund, Megan, King, Sean W., Woodfield, Brian F., and Navrotsky, Alexandra. 2017. "Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma-enhanced chemical vapor deposition". United States. doi:10.1111/jace.15350.
@article{osti_1411087,
title = {Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma-enhanced chemical vapor deposition},
author = {Chen, Jiewei and Niu, Min and Calvin, Jason and Asplund, Megan and King, Sean W. and Woodfield, Brian F. and Navrotsky, Alexandra},
abstractNote = {},
doi = {10.1111/jace.15350},
journal = {Journal of the American Ceramic Society},
number = ,
volume = ,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on December 1, 2018
Publisher's Accepted Manuscript

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  • We investigated the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decamethyl-cyclopentasiloxane (C{sub 10}H{sub 30}O{sub 5}Si{sub 5}) and cyclohexane (C{sub 6}H{sub 12}) as the precursors, which we refer to as plasma polymerized decamethyl-cyclopentasiloxane: cyclohexane (PPDMCPSO:CHex) films. The relative dielectric constants, k, of the plasma polymer films were correlated with the Fourier transform infrared absorption peaks of the C-Hx, Si-CH{sub 3}, and Si-O related groups. As the amount of the CHx species in the as-deposited plasma polymer films increased, the k value and the leakage current density of the thin films decreased. The subsequentmore » annealing of the PPDMCPSO:CHex film at 400 deg. C for 1 h further reduced the k value to as low as k=2.05. This annealed PPDMCPSO:CHex thin film showed a leakage current density of the order of 4x10{sup -7} A/cm{sup 2} at 1 MV/cm and a breakdown field of 6.5 MV/cm. Through the bias-temperature stress test, it was estimated that the PPDMCPSO:CHex film with a k value of 2.05 would retain its insulating properties for ten years at 167 deg. C under an electrical field of 1 MV/cm, when it is presented as a layer adjacent to Cu/TaN(10 nm)« less
  • The influence of plasma-enhanced chemical vapor deposition conditions on the dielectric performance of as-deposited TiO{sub 2} films was studied. It was found that the leakage current density was strongly correlated to the flatband voltage shift ({delta}V{sub FB}). The value of {delta}V{sub FB} increased linearly with the oxygen density, while an optimum was observed with respect to plasma power. By appropriate control of these two variables the electrical performance of as-deposited films approached those of annealed samples.
  • Ultrathin fluorinated silicon nitride (SiN{sub x}) films of 4 nm in thickness were formed on a Si substrate at 350{sup o}C in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH{sub 3}/SiF{sub 4}) gases. Ultrathin fluorinated SiN{sub x} film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO{sub 2} of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D{sub it}=4 x 10{sup 11}cm{sup -2}) in the capacitance--voltage characteristics.more » The film structures and the surface reactions for the fluorinated SiN{sub x} film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN{sub x} films was found to be a key factor in the formation of fluorinated SiN{sub x} films of high quality at low temperatures. Fluorinated SiN{sub x} is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. {copyright} 2001 American Institute of Physics.« less
  • Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH{sub 4} as the source of carbon and with different nitrogen flow rates (N{sub 2}/CH{sub 4} gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp{sup 2}-bonded carbon or a changemore » in sp{sup 2} domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three ({sigma} bonded) to two ({pi} bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. {copyright} 2001 American Institute of Physics.« less
  • Amorphous hydrogenated carbon nitride thin films (a-CN{sub x}:H) have been prepared by plasma-enhanced chemical vapor deposition of N{sub 2} and CH{sub 4} gases using a helical resonator discharge. The structural and optical properties of the deposited a-CN{sub x}:H films have been systematically studied as a function of the substrate temperature and radio frequency (rf) substrate bias. The chemical structure and elemental composition of the a-CN{sub x}:H films were characterized by Fourier transform infrared spectroscopy (FT-IR), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The optical properties of the films were evaluated using transmission ultraviolet{endash}visible spectroscopy. The morphology of the films wasmore » investigated by scanning electron microscopy and atomic force microscopy. The FT-IR and XPS studies demonstrate the presence of carbon{endash}nitrogen bonds with hydrogenated components in the films. The film composition ratio N/C was found to vary from 0.127 to 0.213 depending on the deposition conditions. The Raman spectra, showing the G and D bands, indicate that the a-CN{sub x}:H films have a graphitic structure. It can be found that the optical band-gap E{sub g} of a-CN{sub x}:H films is associated with graphitic clusters, while the decrease in E{sub g} is correlated with an increase in the size and number of graphitic clusters. Combining the results of Raman and optical measurements, it can be concluded that a progressive graphitization of the films occurs with increasing the substrate temperature and rf substrate bias power, corresponding to bias voltage. {copyright} {ital 1997 American Institute of Physics.}« less