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Title: Ni-doped α-Fe 2 O 3 as electron transporting material for planar heterojunction perovskite solar cells with improved efficiency, reduced hysteresis and ultraviolet stability

Abstract

We report on high-efficiency planar heterojunction perovskite solar cells (PSCs) employing Ni-doped alpha-Fe2O3 as electron-transporting layer (ETL). The suitable addition of nickel (Ni) dopant could enhance the electron conductivity as well as induce downward shift of the conduction band minimum for alpha-Fe2O3, which facilitate electrons injection and transfer from the conduction band of the perovskite. As a consequence, a substantial reduction in the charge accumulation at the perovskite/ETL interface makes the device much less sensitive to scanning rate and direction, i.e., lower hysteresis. With a reverse scan for the optimized PSC under standard AM-1.5 sunlight illumination, it generates a competitive power conversion efficiency (PCE) of 14.2% with a large short circuit current (J(sc)) of 22.35 mA/cm(2), an open circuit photovoltage (V-oc) of 0.92 V and a fill factor (FF) of 69.1%. Due to the small J-V hysteresis behavior, a higher stabilized PCE up to 11.6% near the maximum power point can be reached for the device fabricated with 4 mol% Ni-doped alpha-Fe2O3 ETL compared with the undoped alpha-Fe2O3 based cell (9.2%). Furthermore, a good stability of devices with exposure to ambient air and high levels of ultraviolet (UV)-light can be achieved. Overall, our results demonstrate that the simple solution-processed Ni-dopedmore » alpha-Fe2O3 can be a good candidate of the n-type collection layer for commercialization of PSCs.« less

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Natural Science Foundation of China (NNSFC); Ministry of Education of the People's Republic of China - New Century Excellent Talents In University Program; Fundamental Research Funds for the Central Universities; USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
OSTI Identifier:
1411050
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Energy; Journal Volume: 38; Journal Issue: C
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; Electron transporting layer; Hysteresis; Ni-doped alpha-Fe2O3; Perovskite solar cells; Stabilized power output; UV-light and ambient stability

Citation Formats

Guo, Ying, Liu, Tao, Wang, Ning, Luo, Qiang, Lin, Hong, Li, Jianbao, Jiang, Qinglong, Wu, Lili, and Guo, Zhanhu. Ni-doped α-Fe 2 O 3 as electron transporting material for planar heterojunction perovskite solar cells with improved efficiency, reduced hysteresis and ultraviolet stability. United States: N. p., 2017. Web. doi:10.1016/j.nanoen.2017.05.026.
Guo, Ying, Liu, Tao, Wang, Ning, Luo, Qiang, Lin, Hong, Li, Jianbao, Jiang, Qinglong, Wu, Lili, & Guo, Zhanhu. Ni-doped α-Fe 2 O 3 as electron transporting material for planar heterojunction perovskite solar cells with improved efficiency, reduced hysteresis and ultraviolet stability. United States. doi:10.1016/j.nanoen.2017.05.026.
Guo, Ying, Liu, Tao, Wang, Ning, Luo, Qiang, Lin, Hong, Li, Jianbao, Jiang, Qinglong, Wu, Lili, and Guo, Zhanhu. Tue . "Ni-doped α-Fe 2 O 3 as electron transporting material for planar heterojunction perovskite solar cells with improved efficiency, reduced hysteresis and ultraviolet stability". United States. doi:10.1016/j.nanoen.2017.05.026.
@article{osti_1411050,
title = {Ni-doped α-Fe 2 O 3 as electron transporting material for planar heterojunction perovskite solar cells with improved efficiency, reduced hysteresis and ultraviolet stability},
author = {Guo, Ying and Liu, Tao and Wang, Ning and Luo, Qiang and Lin, Hong and Li, Jianbao and Jiang, Qinglong and Wu, Lili and Guo, Zhanhu},
abstractNote = {We report on high-efficiency planar heterojunction perovskite solar cells (PSCs) employing Ni-doped alpha-Fe2O3 as electron-transporting layer (ETL). The suitable addition of nickel (Ni) dopant could enhance the electron conductivity as well as induce downward shift of the conduction band minimum for alpha-Fe2O3, which facilitate electrons injection and transfer from the conduction band of the perovskite. As a consequence, a substantial reduction in the charge accumulation at the perovskite/ETL interface makes the device much less sensitive to scanning rate and direction, i.e., lower hysteresis. With a reverse scan for the optimized PSC under standard AM-1.5 sunlight illumination, it generates a competitive power conversion efficiency (PCE) of 14.2% with a large short circuit current (J(sc)) of 22.35 mA/cm(2), an open circuit photovoltage (V-oc) of 0.92 V and a fill factor (FF) of 69.1%. Due to the small J-V hysteresis behavior, a higher stabilized PCE up to 11.6% near the maximum power point can be reached for the device fabricated with 4 mol% Ni-doped alpha-Fe2O3 ETL compared with the undoped alpha-Fe2O3 based cell (9.2%). Furthermore, a good stability of devices with exposure to ambient air and high levels of ultraviolet (UV)-light can be achieved. Overall, our results demonstrate that the simple solution-processed Ni-doped alpha-Fe2O3 can be a good candidate of the n-type collection layer for commercialization of PSCs.},
doi = {10.1016/j.nanoen.2017.05.026},
journal = {Nano Energy},
number = C,
volume = 38,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}