skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

Abstract

Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

Authors:
ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
OSTI Identifier:
1410910
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Transactions on Industry Applications; Journal Volume: 54; Journal Issue: 2
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 47 OTHER INSTRUMENTATION

Citation Formats

Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto, and Blaabjerg, Frede. Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter. United States: N. p., 2018. Web. doi:10.1109/TIA.2017.2777417.
Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto, & Blaabjerg, Frede. Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter. United States. doi:10.1109/TIA.2017.2777417.
Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto, and Blaabjerg, Frede. Thu . "Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter". United States. doi:10.1109/TIA.2017.2777417.
@article{osti_1410910,
title = {Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter},
author = {Gurpinar, Emre and Iannuzzo, Francesco and Yang, Yongheng and Castellazzi, Alberto and Blaabjerg, Frede},
abstractNote = {Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.},
doi = {10.1109/TIA.2017.2777417},
journal = {IEEE Transactions on Industry Applications},
number = 2,
volume = 54,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2018},
month = {Thu Mar 01 00:00:00 EST 2018}
}