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Title: Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [2]
  1. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1410720
Grant/Contract Number:  
SC-0012375
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces Journal Volume: 5 Journal Issue: 3; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany: N. p., 2017. Web. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, & Martin, Lane W. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W. Thu . "Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films". Germany. doi:10.1002/admi.201700991.
@article{osti_1410720,
title = {Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films},
author = {Saremi, Sahar and Xu, Ruijuan and Dedon, Liv R. and Gao, Ran and Ghosh, Anirban and Dasgupta, Arvind and Martin, Lane W.},
abstractNote = {},
doi = {10.1002/admi.201700991},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 5,
place = {Germany},
year = {Thu Nov 30 00:00:00 EST 2017},
month = {Thu Nov 30 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1002/admi.201700991

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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Works referenced in this record:

Ion implantation for isolation of III-V semiconductors
journal, January 1990