skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [2]
  1. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley CA 94720 USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1410720
Grant/Contract Number:
SC-0012375
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Related Information: CHORUS Timestamp: 2018-02-06 07:20:07; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W.. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany: N. p., 2017. Web. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, & Martin, Lane W.. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films. Germany. doi:10.1002/admi.201700991.
Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W.. 2017. "Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films". Germany. doi:10.1002/admi.201700991.
@article{osti_1410720,
title = {Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films},
author = {Saremi, Sahar and Xu, Ruijuan and Dedon, Liv R. and Gao, Ran and Ghosh, Anirban and Dasgupta, Arvind and Martin, Lane W.},
abstractNote = {},
doi = {10.1002/admi.201700991},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 5,
place = {Germany},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 30, 2018
Publisher's Accepted Manuscript

Save / Share:
  • Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO 3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO 3 (R' and T') in thin films grown on LaAlO 3 substrates with slightly different La 0.3Sr 0.7MnO 3 buffer layers. Our study shows that the polarizationmore » state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. We observed reduction of the monoclinic domain size and found that it was largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T c). Finally, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.« less
  • Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO 3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO 3 (R' and T') in thin films grown on LaAlO 3 substrates with slightly different La 0.3Sr 0.7MnO 3 buffer layers. This study shows that the polarizationmore » state formed during the growth acts as "imprint" on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T c). Lastly, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains« less
  • We investigate ferroelectric resistive switching in BiFeO{sub 3} thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.