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Title: Ion-barrier for memristors/ReRAM and methods thereof

Abstract

The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1410528
Patent Number(s):
9,831,427
Application Number:
14/829,440
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Aug 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Haase, Gad S. Ion-barrier for memristors/ReRAM and methods thereof. United States: N. p., 2017. Web.
Haase, Gad S. Ion-barrier for memristors/ReRAM and methods thereof. United States.
Haase, Gad S. Tue . "Ion-barrier for memristors/ReRAM and methods thereof". United States. doi:. https://www.osti.gov/servlets/purl/1410528.
@article{osti_1410528,
title = {Ion-barrier for memristors/ReRAM and methods thereof},
author = {Haase, Gad S.},
abstractNote = {The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 28 00:00:00 EST 2017},
month = {Tue Nov 28 00:00:00 EST 2017}
}

Patent:

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