Ion-barrier for memristors/ReRAM and methods thereof

Haase, Gad S.

Ion-barrier for memristors/ReRAM and methods thereof

Patent · 27 November 2017

OSTI ID:1410528

Haase, Gad S.

The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 9,831,427

Application Number:: 14/829,440

OSTI ID:: 1410528

Country of Publication:: United States

Language:: English

References (11)

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Ion-barrier for memristors/ReRAM and methods thereof

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