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Title: Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays

Abstract

Terrestrial Cosmic Radiation (TCR) is known to cause failures in high-voltage Si devices resulting in de-rating of the maximum reverse blocking voltage. In this work, a test setup was developed and unaccelerated TCR testing was performed on 1200V Si IGBTs, 1200V SiC MOSFETs and 1200V SiC Schottky diodes. Failures due to TCR were generated on 1200V Si IGBTs at reverse voltages from 900V to 1175V. Si IGBTs investigated in this work will need to be operated at a maximum voltage of 800V to achieve a Failure in Time (FIT) rate of 100. No failures were observed on 1200V SiC MOSFETs and Schottky diodes after testing at 1200V for over 1.5 years demonstrating low FIT rates compared to Si IGBTs. 1200V SiC Schottky diodes were fabricated in this program and the packaged devices were used in the TCR testing.

Authors:
 [1]
  1. Monolith Semiconductor Inc., Round Rock, TX (United States)
Publication Date:
Research Org.:
Monolith Semiconductor Inc., Round Rock, TX (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1410291
Report Number(s):
DOE-MONOLITH-11395-1
DOE Contract Number:
SC0011395
Type / Phase:
SBIR (Phase II)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Terrestrial Cosmic Radiation; SiC

Citation Formats

Chatty, Kiran. Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays. United States: N. p., 2017. Web.
Chatty, Kiran. Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays. United States.
Chatty, Kiran. Mon . "Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays". United States. doi:.
@article{osti_1410291,
title = {Quantifying Appropriate De-rating of SiC MOSFETs Subject to Cosmic Rays},
author = {Chatty, Kiran},
abstractNote = {Terrestrial Cosmic Radiation (TCR) is known to cause failures in high-voltage Si devices resulting in de-rating of the maximum reverse blocking voltage. In this work, a test setup was developed and unaccelerated TCR testing was performed on 1200V Si IGBTs, 1200V SiC MOSFETs and 1200V SiC Schottky diodes. Failures due to TCR were generated on 1200V Si IGBTs at reverse voltages from 900V to 1175V. Si IGBTs investigated in this work will need to be operated at a maximum voltage of 800V to achieve a Failure in Time (FIT) rate of 100. No failures were observed on 1200V SiC MOSFETs and Schottky diodes after testing at 1200V for over 1.5 years demonstrating low FIT rates compared to Si IGBTs. 1200V SiC Schottky diodes were fabricated in this program and the packaged devices were used in the TCR testing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 27 00:00:00 EST 2017},
month = {Mon Nov 27 00:00:00 EST 2017}
}

Technical Report:
This technical report may be released as soon as November 27, 2021
Other availability
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