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Title: Electroabsorption optical modulator

Abstract

An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1410278
Patent Number(s):
9,823,497
Application Number:
15/095,516
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Apr 11
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 47 OTHER INSTRUMENTATION

Citation Formats

Skogen, Erik J. Electroabsorption optical modulator. United States: N. p., 2017. Web.
Skogen, Erik J. Electroabsorption optical modulator. United States.
Skogen, Erik J. 2017. "Electroabsorption optical modulator". United States. doi:. https://www.osti.gov/servlets/purl/1410278.
@article{osti_1410278,
title = {Electroabsorption optical modulator},
author = {Skogen, Erik J.},
abstractNote = {An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2017,
month =
}

Patent:

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  • This paper reports on a compact 10-Gb/s optical transmitter module with small-chirp output developed by using a monolithically integrated electroabsorption modulator with a DFB laser. This module can be operated at a bit rate of more than 10 Gb/s at 1.55 {mu}m, and shows a high modulated output power of {minus}1 dBm with a low optical coupling loss of 3.2 dB between chip and fiber. A new multifunctional and compact optical isolator with a monitor photodiode was also developed to decrease noise.
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  • An improved Mach-Zehnder integrated optical electro-optic modulator is achieved by application and incorporation of a DC bias box containing a laser synchronized trigger circuit, a DC ramp and hold circuit, a modulator transfer function negative peak detector circuit, and an adjustable delay circuit. The DC bias box ramps the DC bias along the transfer function curve to any desired phase or point of operation at which point the RF modulation takes place.
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