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Title: Gate-Voltage Control of Borophene Structure Formation

Authors:
ORCiD logo [1];  [1];  [1];  [1]
  1. Department of Materials Science and NanoEngineering, Rice University, Houston TX 77005 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1410137
Grant/Contract Number:  
SC0012547
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Angewandte Chemie
Additional Journal Information:
Journal Name: Angewandte Chemie Journal Volume: 129 Journal Issue: 48; Journal ID: ISSN 0044-8249
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, and Yakobson, Boris I. Gate-Voltage Control of Borophene Structure Formation. Germany: N. p., 2017. Web. doi:10.1002/ange.201705459.
Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, & Yakobson, Boris I. Gate-Voltage Control of Borophene Structure Formation. Germany. doi:10.1002/ange.201705459.
Zhang, Zhuhua, Shirodkar, Sharmila N., Yang, Yang, and Yakobson, Boris I. Wed . "Gate-Voltage Control of Borophene Structure Formation". Germany. doi:10.1002/ange.201705459.
@article{osti_1410137,
title = {Gate-Voltage Control of Borophene Structure Formation},
author = {Zhang, Zhuhua and Shirodkar, Sharmila N. and Yang, Yang and Yakobson, Boris I.},
abstractNote = {},
doi = {10.1002/ange.201705459},
journal = {Angewandte Chemie},
number = 48,
volume = 129,
place = {Germany},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 25, 2018
Publisher's Accepted Manuscript

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Works referenced in this record:

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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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