Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.; Shao, L.; Kucheyev, S. O.

doi:10.1063/1.4929953

Title: Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4929953· OSTI ID:1410026

Wallace, J. B. ^[1]; Bayu Aji, L. B. ^[2];

^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Texas A & M Univ., College Station, TX (United States)

Above room temperature, the accumulation of radiation damage in 3C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to study lattice disorder in 3C-SiC irradiated with 500 keV Ar ions in the temperature range of 25–250 °C. Results reveal sigmoidal damage buildup for all the temperatures studied. For 150 °C and below, the damage level monotonically increases with ion dose up to amorphization. Starting at 200 °C, the shape of damage–depth profiles becomes anomalous, with the damage peak narrowing and moving to larger depths and an additional shoulder forming close to the ion end of range. As a result, damage buildup curves for 200 and 250 °C exhibit an anomalous two-step shape, with a damage saturation stage followed by rapid amorphization above a critical ion dose, suggesting a nucleation-limited amorphization behavior. Despite their complexity, all damage buildup curves are well described by a phenomenological model based on an assumption of a linear dependence of the effective amorphization cross section on ion dose. Here, in contrast to the results of previous studies, 3C-SiC can be amorphized by bombardment with 500 keV Ar ions even at 250 °C with a relatively large dose rate of ~2×10¹³ cm^-2 s^-1, revealing a dominant role of defect interaction dynamics at elevated temperatures.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1410026

Report Number(s):: LLNL-JRNL-673338

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 10; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B. Applied Physics A, Vol. 125, Issue 1 https://doi.org/10.1007/s00339-018-2325-7	journal	December 2018
Radiation defect dynamics in SiC with pre-existing defects Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Journal of Applied Physics, Vol. 125, Issue 23 https://doi.org/10.1063/1.5093640	journal	June 2019
Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids Wallace, J. B.; Aji, L. B. Bayu; Shao, L. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-17781-5	journal	December 2017

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