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High throughput semiconductor deposition system

Patent ·
OSTI ID:1409831
; ; ; ;
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO); Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
9,824,890
Application Number:
14/801,551
OSTI ID:
1409831
Country of Publication:
United States
Language:
English

References (12)

Gallium Contamination of InP Epitaxial Layers in InP∕InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy journal January 1985
Thin film approaches for high-efficiency III–V cells journal May 1991
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions journal September 2008
Characterization of HVPE-Grown Thick GaAs Structures for IR and THz Generation conference June 2006
Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique journal January 1981
Hydride vapor phase epitaxy revisited journal June 1997
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth journal December 2007
Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies journal March 1978
Vapor-Phase Epitaxy of Group III-V Compound Optoelectronic Devices book October 1985
Hydride VPE growth technique for InP/GaInAsP system journal March 1989
Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy journal April 1981
Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs journal August 2012

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36 MATERIALS SCIENCE