skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of making thermally-isolated silicon-based integrated circuits

Abstract

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1409829
Patent Number(s):
9,824,932
Application Number:
15/234,932
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Aug 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., and Bauer, Todd. Method of making thermally-isolated silicon-based integrated circuits. United States: N. p., 2017. Web.
Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., & Bauer, Todd. Method of making thermally-isolated silicon-based integrated circuits. United States.
Wojciechowski, Kenneth, Olsson, Roy, Clews, Peggy J., and Bauer, Todd. Tue . "Method of making thermally-isolated silicon-based integrated circuits". United States. doi:. https://www.osti.gov/servlets/purl/1409829.
@article{osti_1409829,
title = {Method of making thermally-isolated silicon-based integrated circuits},
author = {Wojciechowski, Kenneth and Olsson, Roy and Clews, Peggy J. and Bauer, Todd},
abstractNote = {Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 21 00:00:00 EST 2017},
month = {Tue Nov 21 00:00:00 EST 2017}
}

Patent:

Save / Share: