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Title: Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5

Abstract

SrCo O 2.5 has a long-range oxygen vacancy ordering that makes it a promising energy material and catalyst carrier. The study of its electronic properties is vital for its practical applications. Here, we investigate its electronic behavior and lattice structural evolution under high pressure up to 22 GPa using synchrotron infrared spectroscopy and x-ray diffraction. A clear electronic transition from a semiconducting state to another semiconducting state is observed around 7.3 GPa upon compression, based on infrared results. Detailed structural examination shows that this electronic transition is accompanied by a structural phase transition, which occurs between 5.3 and 8.6 GPa, as confirmed by x-ray diffraction. The band gap reduces by ~ 40 % at high pressure compared to ambient conditions. This work demonstrates that the oxygen vacancy ordering in SrCo O 2.5 can be sustained up to ~ 8.6 GPa and pressure can narrow the band gap, forcing this unique material to enter into another electronic state with a new crystal structure.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409583
Report Number(s):
BNL-114635-2017-JA¿¿¿
Journal ID: ISSN 2469-9950; PRBMDO
DOE Contract Number:  
SC0012704
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, and Mao, Ho-Kwang. Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCoO2.5. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.024115.
Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, & Mao, Ho-Kwang. Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCoO2.5. United States. doi:10.1103/PhysRevB.95.024115.
Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, and Mao, Ho-Kwang. Sun . "Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCoO2.5". United States. doi:10.1103/PhysRevB.95.024115.
@article{osti_1409583,
title = {Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCoO2.5},
author = {Hong, Fang and Yue, Binbin and Liu, Zhenxian and Chen, Bin and Mao, Ho-Kwang},
abstractNote = {SrCo O 2.5 has a long-range oxygen vacancy ordering that makes it a promising energy material and catalyst carrier. The study of its electronic properties is vital for its practical applications. Here, we investigate its electronic behavior and lattice structural evolution under high pressure up to 22 GPa using synchrotron infrared spectroscopy and x-ray diffraction. A clear electronic transition from a semiconducting state to another semiconducting state is observed around 7.3 GPa upon compression, based on infrared results. Detailed structural examination shows that this electronic transition is accompanied by a structural phase transition, which occurs between 5.3 and 8.6 GPa, as confirmed by x-ray diffraction. The band gap reduces by ~ 40 % at high pressure compared to ambient conditions. This work demonstrates that the oxygen vacancy ordering in SrCo O 2.5 can be sustained up to ~ 8.6 GPa and pressure can narrow the band gap, forcing this unique material to enter into another electronic state with a new crystal structure.},
doi = {10.1103/PhysRevB.95.024115},
journal = {Physical Review B},
issn = {2469-9950},
number = 2,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}

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