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Title: Ga and In adsorption on Si(112): Adsorption sites and superstructure

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Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2469-9950; PRBMDO
DOE Contract Number:  
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 12; Journal ID: ISSN 2469-9950
American Physical Society (APS)
Country of Publication:
United States

Citation Formats

Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., & Falta, J. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J. Wed . "Ga and In adsorption on Si(112): Adsorption sites and superstructure". United States. doi:10.1103/PhysRevB.95.125441.
title = {Ga and In adsorption on Si(112): Adsorption sites and superstructure},
author = {Speckmann, M. and Schmidt, Th. and Flege, J. I. and Höcker, J. and Falta, J.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.125441},
journal = {Physical Review B},
issn = {2469-9950},
number = 12,
volume = 95,
place = {United States},
year = {2017},
month = {3}

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