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Title: BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor

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Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0031-9007; PRLTAO
DOE Contract Number:  
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 118; Journal Issue: 14; Journal ID: ISSN 0031-9007
American Physical Society (APS)
Country of Publication:
United States

Citation Formats

Zhang, Haidong, Liu, Hanyu, Wei, Kaya, Kurakevych, Oleksandr O., Le Godec, Yann, Liu, Zhenxian, Martin, Joshua, Guerrette, Michael, Nolas, George S., and Strobel, Timothy A. BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.118.146601.
Zhang, Haidong, Liu, Hanyu, Wei, Kaya, Kurakevych, Oleksandr O., Le Godec, Yann, Liu, Zhenxian, Martin, Joshua, Guerrette, Michael, Nolas, George S., & Strobel, Timothy A. BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor. United States. doi:10.1103/PhysRevLett.118.146601.
Zhang, Haidong, Liu, Hanyu, Wei, Kaya, Kurakevych, Oleksandr O., Le Godec, Yann, Liu, Zhenxian, Martin, Joshua, Guerrette, Michael, Nolas, George S., and Strobel, Timothy A. Sat . "BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor". United States. doi:10.1103/PhysRevLett.118.146601.
title = {BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor},
author = {Zhang, Haidong and Liu, Hanyu and Wei, Kaya and Kurakevych, Oleksandr O. and Le Godec, Yann and Liu, Zhenxian and Martin, Joshua and Guerrette, Michael and Nolas, George S. and Strobel, Timothy A.},
abstractNote = {},
doi = {10.1103/PhysRevLett.118.146601},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 14,
volume = 118,
place = {United States},
year = {2017},
month = {4}

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