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Title: A comparison of point defects in Cd 1-x Zn x Te 1-y Se y crystals grown by Bridgman and traveling heater methods

Authors:
ORCiD logo; ; ; ; ; ; ; ;  [1]
  1. Savannah River Site (SRS), Aiken, SC (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1408812
Report Number(s):
SRNL-STI-2017-00211
Journal ID: ISSN 0021-8979
DOE Contract Number:
AC09-08SR22470
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 121; Journal Issue: 12
Country of Publication:
United States
Language:
English

Citation Formats

Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Lordi, V., Varley, J., and James, R. B.. A comparison of point defects in Cd 1-x Zn x Te 1-y Se y crystals grown by Bridgman and traveling heater methods. United States: N. p., 2017. Web. doi:10.1063/1.4979012.
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Lordi, V., Varley, J., & James, R. B.. A comparison of point defects in Cd 1-x Zn x Te 1-y Se y crystals grown by Bridgman and traveling heater methods. United States. doi:10.1063/1.4979012.
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Lordi, V., Varley, J., and James, R. B.. Tue . "A comparison of point defects in Cd 1-x Zn x Te 1-y Se y crystals grown by Bridgman and traveling heater methods". United States. doi:10.1063/1.4979012. https://www.osti.gov/servlets/purl/1408812.
@article{osti_1408812,
title = {A comparison of point defects in Cd 1-x Zn x Te 1-y Se y crystals grown by Bridgman and traveling heater methods},
author = {Gul, R. and Roy, U. N. and Camarda, G. S. and Hossain, A. and Yang, G. and Vanier, P. and Lordi, V. and Varley, J. and James, R. B.},
abstractNote = {},
doi = {10.1063/1.4979012},
journal = {Journal of Applied Physics},
number = 12,
volume = 121,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}
  • In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd and two additional traps (attributed to Te i and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less
  • In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides amore » few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less
  • Narrow-gap semiconductors (Hg-,Cd-, and Pb-containing compounds and semimagnetic semiconductors among them) are now attracting investigators` attention. Their effectiveness in applications depends on crystal quality, which is determined by the ways of their production. accordingly, the study of the liquid-phase crystallization conditions is of great importance, as well as the study of features of the component distribution along the ingots, and on the effective coefficients of the component distribution during the crystal growth of the above materials. We grew single crystal of Cd{sub x}Hg{sub 1-x-y}Mn{sub y}Se(Te) solid solutions by the vertical Bridgman technique.
  • Single-crystal ingots of ZnSe/sub 1-x/Te/sub x/ (0< or =x< or =0.03), Zn/sub 1-x/ Cd/sub x/Se (0< or =x< or =0.15), and Zn/sub x/Cd/sub 1-x/S (0< or =x< or =0.35) with diameters up to 50 mm and height up to 20 mm were prepared from the vapor phase. Investigations were made of the cathodoluminescence emitted by these crystals and of the characteristics of the lasers made from them and subjected to longitudinal pumping with an electron beam. In contrast to the two other systems, single crystals of ZnSe/sub 1-x/ Te/sub x/ were unsuitable for semiconductor lasers emitting in the dark bluemore » range because deep levels appeared in the band gap at low Te concentrations.« less
  • We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.