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Title: Direct Probing of Polarization Charge at Nanoscale Level

Journal Article · · Advanced Materials
 [1];  [1]; ORCiD logo [2];  [3];  [4];  [3]; ORCiD logo [5]; ORCiD logo [2]; ORCiD logo [5];  [6]; ORCiD logo [1]
  1. Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Korea Research Inst. of Standards and Science (KRISS), Daejeon (South Korea)
  4. Univ. of Cologne (Germany). Physics Inst.
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
  6. Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics

Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm-2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1414691
Alternate ID(s):
OSTI ID: 1408784
Journal Information:
Advanced Materials, Vol. 30, Issue 1; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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Cited By (3)

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier journal November 2019
Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides journal May 2019
Designing functional ferroelectric interfaces from first-principles: dipoles and band bending at oxide heterojunctions journal November 2019