Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy
Abstract
Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom conceptmore »
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Dept. of Chemistry
- Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry; SLAC National Accelerator Lab., Menlo Park, CA (United States). Theory Inst. for Materials and Energy Spectroscopies
- Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division
- Univ. of California, Berkeley, CA (United States). Dept. of Chemistry. Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); Defense Advanced Research Projects Agency (DARPA) (United States); USDOD; W. M. Keck Foundation (United States); Swiss National Science Foundation (SNSF)
- OSTI Identifier:
- 1408443
- Alternate Identifier(s):
- OSTI ID: 1366565
- Grant/Contract Number:
- AC02-05CH11231; AC03-76SF00098; AC02-76SF00515; WN911NF-14-1-0383; FA9550-15-1-0037; W31P4Q-13-1-0017; P2EZP2_165252
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Structural Dynamics
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2329-7778
- Publisher:
- American Crystallographic Association/AIP
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; germanium; elemental semiconductors; band gap; conduction bands; electron scattering
Citation Formats
Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., and Leone, Stephen R. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy. United States: N. p., 2017.
Web. doi:10.1063/1.4985056.
Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., & Leone, Stephen R. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy. United States. https://doi.org/10.1063/1.4985056
Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., and Leone, Stephen R. Tue .
"Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy". United States. https://doi.org/10.1063/1.4985056. https://www.osti.gov/servlets/purl/1408443.
@article{osti_1408443,
title = {Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy},
author = {Zürch, Michael and Chang, Hung-Tzu and Kraus, Peter M. and Cushing, Scott K. and Borja, Lauren J. and Gandman, Andrey and Kaplan, Christopher J. and Oh, Myoung Hwan and Prell, James S. and Prendergast, David and Pemmaraju, Chaitanya D. and Neumark, Daniel M. and Leone, Stephen R.},
abstractNote = {Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔEgap,Ge,direct = 0.8 eV) and Si0.25Ge0.75 indirect gaps (ΔEgap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.},
doi = {10.1063/1.4985056},
url = {https://www.osti.gov/biblio/1408443},
journal = {Structural Dynamics},
issn = {2329-7778},
number = 4,
volume = 4,
place = {United States},
year = {2017},
month = {6}
}
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Works referencing / citing this record:
Probing ultrafast carrier and phonon dynamics in semiconductors
journal, February 1998
- Othonos, Andreas
- Journal of Applied Physics, Vol. 83, Issue 4
Real-Time Probing of Electron Dynamics Using Attosecond Time-Resolved Spectroscopy
journal, May 2016
- Ramasesha, Krupa; Leone, Stephen R.; Neumark, Daniel M.
- Annual Review of Physical Chemistry, Vol. 67, Issue 1
Attosecond Time-Resolved Autoionization of Argon
journal, October 2010
- Wang, He; Chini, Michael; Chen, Shouyuan
- Physical Review Letters, Vol. 105, Issue 14
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
journal, January 1990
- Bennett, B. R.; Soref, R. A.; Del Alamo, J. A.
- IEEE Journal of Quantum Electronics, Vol. 26, Issue 1
Heterogeneous Integration of Compound Semiconductors
journal, June 2010
- Moutanabbir, Oussama; Gösele, Ulrich
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Density-Functional Theory for Time-Dependent Systems
journal, March 1984
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- Physical Review Letters, Vol. 52, Issue 12
Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
journal, June 2009
- Niquet, Y. M.; Rideau, D.; Tavernier, C.
- Physical Review B, Vol. 79, Issue 24
Ultrafast relaxation dynamics of charge carriers relaxation in ZnO nanocrystalline thin films
journal, March 2004
- Bauer, Christophe; Boschloo, Gerrit; Mukhtar, Emad
- Chemical Physics Letters, Vol. 387, Issue 1-3
Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy
journal, June 2011
- Ulbricht, Ronald; Hendry, Euan; Shan, Jie
- Reviews of Modern Physics, Vol. 83, Issue 2
Virtual crystal approximation revisited: Application to dielectric and piezoelectric properties of perovskites
journal, March 2000
- Bellaiche, L.; Vanderbilt, David
- Physical Review B, Vol. 61, Issue 12
Attosecond band-gap dynamics in silicon
journal, December 2014
- Schultze, M.; Ramasesha, K.; Pemmaraju, C. D.
- Science, Vol. 346, Issue 6215
Colloidal-quantum-dot photovoltaics using atomic-ligand passivation
journal, September 2011
- Tang, Jiang; Kemp, Kyle W.; Hoogland, Sjoerd
- Nature Materials, Vol. 10, Issue 10
Theory of ultrafast phenomena in photoexcited semiconductors
journal, August 2002
- Rossi, Fausto; Kuhn, Tilmann
- Reviews of Modern Physics, Vol. 74, Issue 3
Vibrational Spectra of Hydrogen in Silicon and Germanium
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- Cardona, M.
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Attosecond physics
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- Krausz, Ferenc; Ivanov, Misha
- Reviews of Modern Physics, Vol. 81, Issue 1
Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry
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- Jellison, G. E.
- Optical Materials, Vol. 1, Issue 3
Generalized Gradient Approximation Made Simple
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- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Optical functions of silicon-germanium alloys determined using spectroscopic ellipsometry
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- Jellison, G. E.; Haynes, T. E.; Burke, H. H.
- Optical Materials, Vol. 2, Issue 2
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- Structural Dynamics, Vol. 4, Issue 4
Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films
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- Nagpal, Prashant; Klimov, Victor I.
- Nature Communications, Vol. 2, Issue 1
Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films
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- King, Tsu-Jae
- Journal of The Electrochemical Society, Vol. 141, Issue 8
Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
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- Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.
- Nature Communications, Vol. 8, Issue 1
Extreme ultraviolet transient absorption of solids from femtosecond to attosecond timescales
journal, January 2016
- Borja, Lauren J.; Zürch, M.; Pemmaraju, C. D.
- Journal of the Optical Society of America B, Vol. 33, Issue 7
Statistics of the Recombinations of Holes and Electrons
journal, September 1952
- Shockley, W.; Read, W. T.
- Physical Review, Vol. 87, Issue 5
Atomic-Scale Perspective of Ultrafast Charge Transfer at a Dye–Semiconductor Interface
journal, July 2014
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- The Journal of Physical Chemistry Letters, Vol. 5, Issue 15
Silicon-based silicon–germanium–tin heterostructure photonics
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- Soref, Richard
- Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 372, Issue 2012
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
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- Kuo, Yu-Hsuan; Lee, Yong Kyu; Ge, Yangsi
- Nature, Vol. 437, Issue 7063
Hydrogenated microcrystalline silicon germanium: A bottom cell material for amorphous silicon‐based tandem solar cells
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- Ganguly, G.; Ikeda, T.; Nishimiya, T.
- Applied Physics Letters, Vol. 69, Issue 27
Analysis of separable potentials
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Polarization-assisted amplitude gating as a route to tunable, high-contrast attosecond pulses
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- Timmers, Henry; Sabbar, Mazyar; Hellwagner, Johannes
- Optica, Vol. 3, Issue 7
Near-band-gap photoluminescence of Si-Ge alloys
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- Weber, J.; Alonso, M. I.
- Physical Review B, Vol. 40, Issue 8
Petahertz optical drive with wide-bandgap semiconductor
journal, April 2016
- Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko
- Nature Physics, Vol. 12, Issue 8
Electronic structure of hydrogenated amorphous silicon-germanium alloys studied by X-ray photoelectron spectroscopy and soft-X-ray spectroscopy
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- Senemaud, C.; Ardelean, I.
- Journal of Physics: Condensed Matter, Vol. 2, Issue 44
The direct and indirect bandgaps of unstrained Si x Ge 1−x−y Sn y and their photonic device applications
journal, October 2012
- Moontragoon, P.; Soref, R. A.; Ikonic, Z.
- Journal of Applied Physics, Vol. 112, Issue 7
Core-level shifts of the Ge(100)-(2×1) surface and their origins
journal, June 1992
- Cao, R.; Yang, X.; Terry, J.
- Physical Review B, Vol. 45, Issue 23
Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys
journal, July 1989
- Stutzmann, M.; Street, R. A.; Tsai, C. C.
- Journal of Applied Physics, Vol. 66, Issue 2
Optical-field-induced current in dielectrics
journal, December 2012
- Schiffrin, Agustin; Paasch-Colberg, Tim; Karpowicz, Nicholas
- Nature, Vol. 493, Issue 7430
Influence of hot phonons on energy relaxation of high-density carriers in germanium
journal, June 1979
- van Driel, H. M.
- Physical Review B, Vol. 19, Issue 11
Temperature dependence of the direct gap of Si and Ge
journal, April 1983
- Allen, P. B.; Cardona, M.
- Physical Review B, Vol. 27, Issue 8
Phonon-Assisted Optical Absorption in Silicon from First Principles
journal, April 2012
- Noffsinger, Jesse; Kioupakis, Emmanouil; Van de Walle, Chris G.
- Physical Review Letters, Vol. 108, Issue 16
Lasing in direct-bandgap GeSn alloy grown on Si
journal, January 2015
- Wirths, S.; Geiger, R.; von den Driesch, N.
- Nature Photonics, Vol. 9, Issue 2
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
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- Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
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Controlling dielectrics with the electric field of light
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- Schultze, Martin; Bothschafter, Elisabeth M.; Sommer, Annkatrin
- Nature, Vol. 493, Issue 7430
Attosecond optical-field-enhanced carrier injection into the GaAs conduction band
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