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Title: Multicolor emission from intermediate band semiconductor ZnO 1-xSe x

Abstract

Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E - and upper E + valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

Authors:
 [1];  [2];  [1];  [1];  [3];  [4];  [4]
  1. Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology
  2. Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology; National Lab. for Intense Magnetic Fields (LNCMI), Grenoble and Toulouse (France)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China). Dept. of Physics and Materials Science
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Publication Date:
Research Org.:
Wroclaw Univ. of Science and Technology (Poland); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); City Univ. of Hong Kong (China)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Centre (Poland); Research Grants Council of Hong Kong SAR (China)
OSTI Identifier:
1408425
Grant/Contract Number:  
AC02-05CH11231; 2013/10/M/ST3/00638; 2014/15/N/ST3/03811; 2014/13/D/ST3/01947; 11303715
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; semiconductors; solar cells

Citation Formats

Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., and Walukiewicz, W. Multicolor emission from intermediate band semiconductor ZnO1-xSex. United States: N. p., 2017. Web. doi:10.1038/srep44214.
Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., & Walukiewicz, W. Multicolor emission from intermediate band semiconductor ZnO1-xSex. United States. doi:10.1038/srep44214.
Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., and Walukiewicz, W. Mon . "Multicolor emission from intermediate band semiconductor ZnO1-xSex". United States. doi:10.1038/srep44214. https://www.osti.gov/servlets/purl/1408425.
@article{osti_1408425,
title = {Multicolor emission from intermediate band semiconductor ZnO1-xSex},
author = {Welna, M. and Baranowski, M. and Linhart, W. M. and Kudrawiec, R. and Yu, K. M. and Mayer, M. and Walukiewicz, W.},
abstractNote = {Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E- and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.},
doi = {10.1038/srep44214},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {Mon Mar 13 00:00:00 EDT 2017},
month = {Mon Mar 13 00:00:00 EDT 2017}
}

Journal Article:
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Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034