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Title: Integrated Silicon Carbide Power Electronic Block

Abstract

Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles weremore » uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less

Authors:
 [1]
  1. Global Power Technologies Group, Inc., Lake Forest, CA (United States)
Publication Date:
Research Org.:
Global Power Technologies Group, Inc., Lake Forest, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1408273
Report Number(s):
DOE-GPTG-15991
DOE Contract Number:
SC0015991
Type / Phase:
SBIR (Phase I)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Silicon carbide; SiC; DMOSFET; JBS Diode

Citation Formats

Radhakrishnan, Rahul. Integrated Silicon Carbide Power Electronic Block. United States: N. p., 2017. Web. doi:10.2172/1408273.
Radhakrishnan, Rahul. Integrated Silicon Carbide Power Electronic Block. United States. doi:10.2172/1408273.
Radhakrishnan, Rahul. Tue . "Integrated Silicon Carbide Power Electronic Block". United States. doi:10.2172/1408273. https://www.osti.gov/servlets/purl/1408273.
@article{osti_1408273,
title = {Integrated Silicon Carbide Power Electronic Block},
author = {Radhakrishnan, Rahul},
abstractNote = {Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.},
doi = {10.2172/1408273},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 07 00:00:00 EST 2017},
month = {Tue Nov 07 00:00:00 EST 2017}
}

Technical Report:
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