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Title: Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1408170
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 18; Related Information: CHORUS Timestamp: 2017-11-03 10:32:34; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Jones, Eric B., and Stevanović, Vladan. Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.184101.
Jones, Eric B., & Stevanović, Vladan. Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures. United States. doi:10.1103/PhysRevB.96.184101.
Jones, Eric B., and Stevanović, Vladan. Fri . "Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures". United States. doi:10.1103/PhysRevB.96.184101.
@article{osti_1408170,
title = {Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures},
author = {Jones, Eric B. and Stevanović, Vladan},
abstractNote = {},
doi = {10.1103/PhysRevB.96.184101},
journal = {Physical Review B},
number = 18,
volume = 96,
place = {United States},
year = {Fri Nov 03 00:00:00 EDT 2017},
month = {Fri Nov 03 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 3, 2018
Publisher's Accepted Manuscript

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