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Title: Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron-Scale Spatial Resolution Using Spectral Photoluminescence

Authors:
ORCiD logo [1];  [2];  [1];  [2];  [2];  [2];  [2];  [1]
  1. Research School of Engineering The Australian National University, Canberra ACT 2601 Australia
  2. National Renewable Energy Laboratory, Golden CO 80401 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1408156
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Solar RRL
Additional Journal Information:
Journal Volume: 1; Journal Issue: 11; Related Information: CHORUS Timestamp: 2017-11-13 02:48:29; Journal ID: ISSN 2367-198X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Nguyen, Hieu T., Johnston, Steve, Basnet, Rabin, Guthrey, Harvey, Dippo, Pat, Zhang, Hanyu, Al-Jassim, Mowafak M., and Macdonald, Daniel. Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron-Scale Spatial Resolution Using Spectral Photoluminescence. Germany: N. p., 2017. Web. doi:10.1002/solr.201700157.
Nguyen, Hieu T., Johnston, Steve, Basnet, Rabin, Guthrey, Harvey, Dippo, Pat, Zhang, Hanyu, Al-Jassim, Mowafak M., & Macdonald, Daniel. Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron-Scale Spatial Resolution Using Spectral Photoluminescence. Germany. doi:10.1002/solr.201700157.
Nguyen, Hieu T., Johnston, Steve, Basnet, Rabin, Guthrey, Harvey, Dippo, Pat, Zhang, Hanyu, Al-Jassim, Mowafak M., and Macdonald, Daniel. 2017. "Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron-Scale Spatial Resolution Using Spectral Photoluminescence". Germany. doi:10.1002/solr.201700157.
@article{osti_1408156,
title = {Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron-Scale Spatial Resolution Using Spectral Photoluminescence},
author = {Nguyen, Hieu T. and Johnston, Steve and Basnet, Rabin and Guthrey, Harvey and Dippo, Pat and Zhang, Hanyu and Al-Jassim, Mowafak M. and Macdonald, Daniel},
abstractNote = {},
doi = {10.1002/solr.201700157},
journal = {Solar RRL},
number = 11,
volume = 1,
place = {Germany},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 30, 2018
Publisher's Accepted Manuscript

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  • In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al{sub 2}O{sub 3}) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al{sub 2}O{sub 3} layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al{sub 2}O{sub 3} interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initialmore » amorphous Al{sub 2}O{sub 3} layer crystallize into the γ-Al{sub 2}O{sub 3} structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al{sub 2}O{sub 3} layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al{sub 2}O{sub 3} layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al{sub 2}O{sub 3} layers at a molecular level like the origin of the negative fixe charges at the Si/SiO{sub x}/Al{sub 2}O{sub 3} interface or the phenomena of blistering. Moreover, the crystal phase of Al{sub 2}O{sub 3} does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.« less
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