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Title: CsPbBr 3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition

Abstract

All inorganic cesium lead bromide (CsPbBr 3) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr 3) for designing high open-circuit voltage solar cells and display devices. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr 3 devices. Our layer-by-layer methodology, which makes use of CsPbBr 3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Additionally, a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Devices optimized to both QD spin-casting concentration and overall CsPbBr 3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a V oc value of 1.4 V. Finally, the layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.

Authors:
 [1];  [2];  [1]; ORCiD logo [3]
  1. Univ. of Notre Dame, IN (United States). Radiation Lab.; Univ. of Notre Dame, IN (United States). Dept. of Chemistry & Biochemistry
  2. Univ. of Notre Dame, IN (United States). Radiation Lab.
  3. Univ. of Notre Dame, IN (United States). Radiation Lab.; Univ. of Notre Dame, IN (United States). Dept. of Chemistry & Biochemistry; Univ. of Notre Dame, IN (United States). Dept. of Chemical and Biomolecular Engineering
Publication Date:
Research Org.:
Univ. of Notre Dame, IN (United States). Radiation Laboratory
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1408150
Alternate Identifier(s):
OSTI ID: 1413252
Grant/Contract Number:
FC02-04ER15533
Resource Type:
Journal Article: Published Article
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 22; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Hoffman, Jacob B., Zaiats, Gary, Wappes, Isaac, and Kamat, Prashant V. CsPbBr3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition. United States: N. p., 2017. Web. doi:10.1021/acs.chemmater.7b03751.
Hoffman, Jacob B., Zaiats, Gary, Wappes, Isaac, & Kamat, Prashant V. CsPbBr3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition. United States. doi:10.1021/acs.chemmater.7b03751.
Hoffman, Jacob B., Zaiats, Gary, Wappes, Isaac, and Kamat, Prashant V. Wed . "CsPbBr3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition". United States. doi:10.1021/acs.chemmater.7b03751.
@article{osti_1408150,
title = {CsPbBr3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition},
author = {Hoffman, Jacob B. and Zaiats, Gary and Wappes, Isaac and Kamat, Prashant V.},
abstractNote = {All inorganic cesium lead bromide (CsPbBr3) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr3) for designing high open-circuit voltage solar cells and display devices. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr3 devices. Our layer-by-layer methodology, which makes use of CsPbBr3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Additionally, a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Devices optimized to both QD spin-casting concentration and overall CsPbBr3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a Voc value of 1.4 V. Finally, the layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.},
doi = {10.1021/acs.chemmater.7b03751},
journal = {Chemistry of Materials},
number = 22,
volume = 29,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1021/acs.chemmater.7b03751

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