Grain boundary dominated electrical conductivity in ultrananocrystalline diamond
- Ulm Univ., Ulm (Germany)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Univ. of California, Irvine, CA (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
Here, N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H2, CH4 and NH3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10–2 to 5 × 101S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown by systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300–1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.
- Research Organization:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; German Ministry of Education and Research (BMBF)
- Grant/Contract Number:
- AC52-07NA27344; FKZ 16SV5320K; AC02-76SF00515
- OSTI ID:
- 1408101
- Alternate ID(s):
- OSTI ID: 1860744
- Report Number(s):
- LLNL-JRNL-705209; TRN: US1703064
- Journal Information:
- Journal of Applied Physics, Vol. 122, Issue 14; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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