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Title: Method for single crystal growth of photovoltaic perovskite material and devices

Abstract

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Inventors:
;
Publication Date:
Research Org.:
NUtech Ventures, Lincoln, NE (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1407495
Patent Number(s):
9,812,660
Application Number:
15/009,701
Assignee:
NUtech Ventures DOEEE
DOE Contract Number:  
EE0006709
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Huang, Jinsong, and Dong, Qingfeng. Method for single crystal growth of photovoltaic perovskite material and devices. United States: N. p., 2017. Web.
Huang, Jinsong, & Dong, Qingfeng. Method for single crystal growth of photovoltaic perovskite material and devices. United States.
Huang, Jinsong, and Dong, Qingfeng. Tue . "Method for single crystal growth of photovoltaic perovskite material and devices". United States. doi:. https://www.osti.gov/servlets/purl/1407495.
@article{osti_1407495,
title = {Method for single crystal growth of photovoltaic perovskite material and devices},
author = {Huang, Jinsong and Dong, Qingfeng},
abstractNote = {Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 07 00:00:00 EST 2017},
month = {Tue Nov 07 00:00:00 EST 2017}
}

Patent:

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