skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for single crystal growth of photovoltaic perovskite material and devices

Abstract

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Inventors:
;
Publication Date:
Research Org.:
NUtech Ventures, Lincoln, NE (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1407495
Patent Number(s):
9,812,660
Application Number:
15/009,701
Assignee:
NUtech Ventures DOEEE
DOE Contract Number:
EE0006709
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Huang, Jinsong, and Dong, Qingfeng. Method for single crystal growth of photovoltaic perovskite material and devices. United States: N. p., 2017. Web.
Huang, Jinsong, & Dong, Qingfeng. Method for single crystal growth of photovoltaic perovskite material and devices. United States.
Huang, Jinsong, and Dong, Qingfeng. 2017. "Method for single crystal growth of photovoltaic perovskite material and devices". United States. doi:. https://www.osti.gov/servlets/purl/1407495.
@article{osti_1407495,
title = {Method for single crystal growth of photovoltaic perovskite material and devices},
author = {Huang, Jinsong and Dong, Qingfeng},
abstractNote = {Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2017,
month =
}

Patent:

Save / Share:
  • A thin-film single-crystal infrared detector exhibiting an increased frequency of response is described. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
  • There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
  • There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
  • A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells.more » The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.« less
  • A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells.more » The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.« less