Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN

Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

doi:10.1063/1.5009757

Title: Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al ₂ O ₃ dielectrics grown on GaN

Journal Article · Tue Nov 07 00:00:00 EST 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5009757· OSTI ID:1407436

^[1]; Bisi, Davide ^[2];

^[3]; Yeluri, Ramya ^[3]; Tahhan, Maher ^[3]; Keller, Stacia ^[3];

^[4]; Meneghini, Matteo ^[2]; Mishra, Umesh K. ^[3]

Materials Department, University of California, Santa Barbara, California 93106, USA
Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1407436

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 122 Journal Issue: 17; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (34)

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Title: Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al ₂ O ₃ dielectrics grown on GaN