Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond
Abstract
Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. In this study, we find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800°C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. Finally, these observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation.
- Authors:
-
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator and Fusion Research Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1407152
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- New Journal of Physics
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 4; Journal ID: ISSN 1367-2630
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Schwartz, J., Aloni, S., Ogletree, D. F., and Schenkel, T. Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond. United States: N. p., 2012.
Web. doi:10.1088/1367-2630/14/4/043024.
Schwartz, J., Aloni, S., Ogletree, D. F., & Schenkel, T. Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond. United States. https://doi.org/10.1088/1367-2630/14/4/043024
Schwartz, J., Aloni, S., Ogletree, D. F., and Schenkel, T. 2012.
"Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond". United States. https://doi.org/10.1088/1367-2630/14/4/043024. https://www.osti.gov/servlets/purl/1407152.
@article{osti_1407152,
title = {Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond},
author = {Schwartz, J. and Aloni, S. and Ogletree, D. F. and Schenkel, T.},
abstractNote = {Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. In this study, we find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800°C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. Finally, these observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation.},
doi = {10.1088/1367-2630/14/4/043024},
url = {https://www.osti.gov/biblio/1407152},
journal = {New Journal of Physics},
issn = {1367-2630},
number = 4,
volume = 14,
place = {United States},
year = {Fri Apr 20 00:00:00 EDT 2012},
month = {Fri Apr 20 00:00:00 EDT 2012}
}
Web of Science
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