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Title: Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1406871
Report Number(s):
SAND2016-10802C
648616
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2016 International Workshop on Nitride Semiconductors held October 2-7, 2016 in Orlando, FL.
Country of Publication:
United States
Language:
English

Citation Formats

Leung, Benjamin, Tsai, Miao-Chan, Li, Changyi, Balakrishnan, Ganesh, and Wang, George T. Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.. United States: N. p., 2016. Web.
Leung, Benjamin, Tsai, Miao-Chan, Li, Changyi, Balakrishnan, Ganesh, & Wang, George T. Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.. United States.
Leung, Benjamin, Tsai, Miao-Chan, Li, Changyi, Balakrishnan, Ganesh, and Wang, George T. Sat . "Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.". United States. doi:. https://www.osti.gov/servlets/purl/1406871.
@article{osti_1406871,
title = {Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.},
author = {Leung, Benjamin and Tsai, Miao-Chan and Li, Changyi and Balakrishnan, Ganesh and Wang, George T.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}

Conference:
Other availability
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